There are two types of 600V/650V Gan devices: depletion-mode (typically on) and enhancement-mode (typically off). A low-voltage silicon MOSFET is utilized in series to drive the Gan, which is referred to as cascade structure, making it simple to apply a normally on Gan in circuit design.
GaN devices clearly have considerably reduced Qi and Cos values, according to the device characteristics, which suggests that they can operate at higher frequencies. Systematic research has been done on cascade Gan device characteristics. According to the analytical and experimental findings, the charge of the free-wheeling switch contributes significantly to the turn-on switching loss, but the current source driving mechanism contributes significantly to the turn-off switching loss, which is minimal and load current independent.
The usage of two separate devices results in increased interconnect parasitic inductance, which may slow down switching and result in internal oscillation under conditions of high load current.
The Global 600V Gan power device market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
Recently, Texas Instruments unveiled a new lineup of ready-to-use, 600-V, 50-m and 70-m Gallium Nitride (Gan), power stages to enable applications up to 10 kW. Compared to silicon field-effect transistors (FETs), the LMG341x family enables designers to construct smaller, more effective, and higher-performing solutions for AC/DC power supplies, robotics, renewable energy, grid infrastructure, telecom, and personal electronics applications.
By incorporating special functional and protection characteristics to simplify design, enable improved system reliability, and maximize the performance of high-voltage power supplies, TI’s family of Gan FET devices offers a clever substitute for conventional cascade and stand-alone Gan FETs. The devices avoid thermal runaway and unintentional shoot-through events with integrated 100-ns current limiting and over temperature detection, while system interface signals allow for self-monitoring.
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