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A MOSFET type utilized in high voltage applications is a 600V high voltage super junction MOSFET. When compared to traditional MOSFETs, these devices perform better because of new fabrication techniques.
In power supply applications, a 600V high voltage super junction MOSFET is utilized to switch the current flow between an AC and a DC source.
Due to their high current handling capacity, these devices are appropriate for use in power supply applications as well as other situations where high currents are needed.
The global 600V super junction MOSFET market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2023 to 2030.
Magnachip Semiconductor Corporation declared that it had introduced 11 new models of high-voltage 600V Super Junction Metal Oxide Semiconductor Field Effect Transistors (SJ MOSFETs).
The business has already made product samples available, and mass production will soon start. The latest process technology was used to create the new 2.5th generation (2.5G) 600V SJ MOSFETs, which have switching performance improvements of over 10% over earlier generations.
Magnachip has consequently improved power efficiency and decreased switching loss. A Zener diode is inserted between a gate and source for applications needing strong Electrostatic Discharge (ESD) robustness in order to prevent damage to a MOSFET from an external surge or ESD.
The new 600V SJ MOSFET product line supports a Rds(on) (drain-source on resistance) of 190–580mOhm and is available in industry-standard packaging configurations like DPAK, TO-220F, and TO-220SF.
Therefore, a wide range of products and applications, such as TVs, lighting infrastructure, rapid chargers, adapters, PC power, and industrial power supply, can utilize these new 2.5G items. Additionally, they work well with both hard and soft switching topologies.
PANJIT Introduces New 600V/650V Super Junction MOSFET Series. PANJIT Introduces First Generation Super Junction (SJ) MOSFET Appropriate for Various Topologies of DC-DC Converter and Power Factor Correction (PFC) Circuits.
The recently released SJ MOSFET is intended for use in power supply units (PSU). A power supply unit (PSU) is a type of power converter commonly used in commercial and industrial systems, such as AC-DC or DC-DC converters.
In order to enable the Super Junction MOSFET to be used in higher power systems, Multi Epi Layer technology could be applied to the Super Junction MOSFET wafers.
As a result, PANJIT’s new generation SJ MOSFETs are intended for use in power systems such as communication, data centers, computing power supplies, PD charger/adapters for home appliances, and other similar systems.
New 950 V Superjunction MOSFETs from Infineon have been launched. The new 950 V series incorporates an integrated fast body diode to provide a sturdy device and, as a result, a smaller bill of materials (BOM), and it combines great performance with cutting-edge ease of use.
The new products are primarily targeting lighting systems, as well as consumer and industrial SMPS applications, and are tailored to ultrahigh-power density and the greatest efficiency designs.
The new devices are appropriate for flyback, PFC, and LLC/LCC systems, including half- or full-bridge arrangements, making commutation strong and reliable.
They provide hard commutation robustness and dependability by merging an ultra-fast body diode with an ultra-low reverse recovery charge (Q rr).
Since it may be used in all topologies for the intended applications, it is the most durable SJ MOSFET in this voltage class.
Additionally, much lower switching losses (E OSS, Q OSS, and Q g) increase efficiency in hard- and soft-switching applications and result in a MOSFET temperature that is up to 4°K lower than that of a 900 V CoolMOS C3 SJ MOSFET.
In order to contribute to a greener world, the new solutions increase PFC efficiency for light- and full-load applications by more than 0.2% while maintaining performance levels for LLC efficiency.
The new family provides devices with on resistance (R DS(on)) reductions of up to 55% in a variety of SMD and THD packages, such as 450 m in DPAK or 60 m in TO247.
The new devices are simple to design-in and control, resulting in more design freedom.
They have a gate-source threshold voltage (V (GS),th) of 3 V and the smallest V (GS),the fluctuation of 0.5 V. MOSFET linear mode operation is prevented thanks to the low threshold voltage and tolerance, which also permits lower driving voltage and lower idle loss.
In addition, driving losses are greatly decreased thanks to a gate charge that is 60% better than CoolMOS C3. A human body model (HBM) level of class 2 ensures ESD robustness, resulting in fewer ESD-related failures and increased manufacturing yield.
Toshiba launched a line of 600V super junction N-channel power MOSFETs with extremely low RDS(on). A 13% improvement over comparable devices in the well-known DTMOS IV-H series of the business, the new MOSFET has an RDS(on) of only 55m.
Additionally, a 52% improvement is made to the RDS(on) x Qgd, a measure of MOSFET performance. High-efficiency switching power supplies for data centres, power conditioners for photovoltaic generators, and uninterruptible power supply are among the target applications.
With a Kelvin connection for the signal source terminal, the new device uses the well-liked TOLL packaging. Because switching oscillation is decreased and switching performance is improved when the MOSFET works at high gating speeds, the source wire’s inductance has less of an effect.
The new product’s maximum channel temperature (Tch) is 150°C. A gate-source voltage of 10V is required to achieve the typical RDS(on) of 47m.
