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The market-leading ArF immersion scanner uses the well-known Streamlign platform and the most recent advancements in lens, autofocus, alignment, and defectivity minimization technologies to provide unmatched multiple patterning performance and productivity.
For patterning crucial layers during the fabrication of integrated circuits (ICs) and for multi-patterning applications that support the most cutting-edge semiconductor production nodes in the world, ArF (argon fluoride) immersion light sources have a 193 nm wavelength.
It is compatible with complex computational and on-product learning software solutions and connected with the industry-leading inline Alignment Station (iAS). These components work together to guarantee top-notch device patterning and maximum fab productivity to completely meet 5 nm node needs and beyond.
Uses a reticle stage with an encoder servo system to boost precision along with the well-known Bird’s Eye Control technology to precisely determine wafer location.
Additionally, improvements to the scanner’s stage controller and metrology system enable higher overlay accuracy, and improved component materials and temperature management capabilities assure exceptional tool overlay stability even in the harshest production environments.
Global ArF immersion scanner market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
The NSR-S631E is the newest generation Nikon ArF immersion scanner from Nikon Corporation.This lithography equipment was created for use in high-volume semiconductor production using 7-nm node techniques. It has the high precision and outstanding productivity of the tried-and-true and it allows multiple patterning.
Today’s cutting-edge semiconductors are shifting to 10-nm node techniques for high-volume production, while 7-nm node methods are being used for development.
Photolithography technologies continue to rely on multiple patterning technology with ArF immersion exposure systems to further miniaturise circuit patterns. Improved overlay productivity and accuracy are crucial for these exposure systems.
Through the employment of a novel projection lens and enhanced alignment system mark detection and measurement, the NSR-S631E achieves a mix-and-match overlay (MMO) of 2.3 nm or less. With throughput capacities of up to 270 (96-shot) wafers per hour, the S631E also maximises fab productivity.
