- Get in Touch with Us
Last Updated: Apr 26, 2025 | Study Period: 2024-2030
MRAM (magnetoresistive random access memory) is a form of non-volatile RAM that stores data using magnetic charges as opposed to SRAM and DRAM, which use electrical charges.The most dependable storage option is provided by MRAM memory, which combines the high speed of static RAM and the great density of DRAM.MRAM works by altering the spin of electrons in thin magnetic film layers.
When both layers spin in the same direction, there is less resistance between them.MRAM's low energy usage is a clear advantage. The downtime associated with software upgrades will be reduced since the new Embedded MRAM memory will be able to update 20MB of code in around 3 seconds as opposed to flash memories, which take about 1 minute. Additionally, MRAM offers a technology that is extremely dependable for automotive mission profiles by providing up to one million update cycles, a degree of endurance ten times higher.
Field-switched toggle MRAM and spin torque transfer MRAM (STT-MRAM) are the two MRAM architectures. While STT-RAM is more recent and uses a simpler design to attain better bit densities, toggle RAM has been around for more than ten years.
TheGlobal Automotive Embedded MRAM marketaccounted for $XX Billion in 2022 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2023 to 2030.
NXP and TSMC to Deliver Industryâs First Automotive 16 nm FinFET Embedded MRAM.NXP Semiconductors, the global leader in automotive processing, announced today a partnership with TSMC to produce the industry's first automotive integrated MRAM (Magnetic Random Access Memory) on 16 nm FinFET technology.
Automakers must handle numerous generations of software upgrades on a single hardware platform as they shift to software-defined vehicles (SDVs). The combination of NXP's high-performance S32 automotive processors and fast, highly reliable next-generation non-volatile memory in 16 nm FinFET technology offers the optimal hardware foundation for this transition.
MRAM can update 20MB of code in 3 seconds, compared to flash memory, which take roughly 1 minute, reducing downtime associated with software upgrades and allowing automakers to alleviate bottlenecks caused by long module programming periods.Furthermore, MRAM is a very dependable technology for automotive mission profiles, with up to one million update cycles, which is ten times larger than flash and other upcoming memory technologies.
SDVs allow automakers to deploy new comfort, safety, and convenience features via over-the-air (OTA) upgrades, prolonging vehicle life and improving functionality, attractiveness, and profitability. As software-based features grow more common in automobiles, the frequency of updates will rise, making MRAM's speed and reliability even more critical.
With its one-million cycle endurance, support for solder reflow, and 20-year data retention at 150°C, TSMC's 16FinFET integrated MRAM technology satisfies the stringent requirements of automotive applications.
© 2017-2025 Mobility Foresights Pvt Ltd. All rights reserved.