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A semiconductor material called gallium nitride is being employed more frequently to offer better performance, particularly in HEMTs and high-speed and RF FETs.
RF power circuit designs and many other power modules and devices increasingly make use of gallium nitride, often known as GaN FETs or GaN transistors. The phrases GaN HEMT and GaN transistor are frequently used synonymously.
GaN’s extremely fast electron mobility makes it possible to fabricate semiconductor devices with low ON resistance values and extremely high switching frequencies.
GaN FETs are now being employed in numerous novel electronic circuit designs for a variety of purposes, including power systems, electric cars, and renewable energy applications, as well as RF power amplifiers and other RF design circuits.
GaN FETs create a very thin zone known as the 2DEG (see below for an explanation) at the interface between two semiconductor materials in order to give extremely high levels of electron mobility that lead to the formation of GaN HEMTs, or high electron mobility transistors.
High electron mobility transistors, often known as HEMTs, are what GaN FETs or GaN transistors are in essence. Other FET technologies have made use of the HEMT principle, which has been around for a while.
A “Wurtzite” structure is the name given to the chemical makeup of gallium nitride. The HEMT operation of the GaN transistors depends on this structure.
Global Automotive GaN FET market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
With the launch of the EPC2066 (0.8m typical, 40V) GaN FET, Efficient Power Conversion Corp. (EPC) has increased the variety of low-voltage, off-the-shelf gallium nitride (GaN) transistors available to designers.
This device is significantly smaller and more effective than silicon MOSFETs for high-performance, space-constrained applications.
The EPC2066 is the perfect switch for the secondary side of high power density 40V-60V to 12V DC-DC converters for the newest servers and artificial intelligence (AI) applications due to its low losses and compact size.
Additionally, it is perfect for high density motor driving applications from 24V to 32V, secondary side synchronous rectification to 12V in power supplies, and silver box data centre servers.
Modern power density is made possible by the GaN FET’s tremendous efficiency, ultra-small 13.9mm2 size, and high-frequency operation.
