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The first type of solid-state storage to be widely used in automobile applications was NAND storage in the form of eMMC. This non-removable memory card is widely used in mobile phones and is glued into a circuit board, making it resistant to continual vibrations.
NAND memory uses electrical circuits to store data and saves information as blocks. A metal-oxide semiconductor will give the memory cell an additional charge when the power is cut off in NAND flash memory, keeping the data there.
NAND is a kind of flash memory that offers faster erase and write speeds than hard drives and needs less chip space per cell, enabling higher storage densities and more affordable prices. As a result of new 3D NAND technology, SSD performance, capacity, and power efficiency are all rising.
The Global Automotive NAND market accounted for $XX Billion in 2022 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2023 to 2030.
Micron Ships World’s First 232-Layer NAND, Extends Technology Leadership.New developments provide TLC NAND with the best performance and wafer density, all in the smallest package available in the market.
The first 232-layer NAND in the world has commenced volume production, according to Micron Technology, Inc. It was designed using leading-edge technologies to deliver unheard-of performance for storage solutions.
In comparison to earlier generations of Micron NAND, it offers the most industry-leading areal density, more capacity, and enhanced energy efficiency, enabling best-in-class support for the most data-intensive use cases from client to cloud.
The high-performance storage required to enable cutting-edge solutions and real-time services required in data centre and automotive applications, as well as responsive, immersive experiences on mobile devices, consumer electronics, and PCs, is provided by Micron’s 232-layer NAND technology.
In order to meet the low-latency and high-throughput requirements of data-centric workloads such as artificial intelligence and machine learning, unstructured databases and real-time analytics, and cloud computing, this technology node enables the introduction of the fastest NAND I/O speed in the industry, 2.4 gigabytes per second (GB/s).
When compared to Micron’s 176-layer node’s fastest interface, the speed provides a 50% quicker data transmission.
Additionally, compared to the previous generation, Micron’s 232-layer NAND offers up to 100% greater write bandwidth and more than 75% more read bandwidth per die.
Gains in performance and energy efficiency are produced by these per-die advantages in SSDs and integrated NAND technologies.
