GLOBAL AUTOMOTIVE SELF-PROTECTED MOSFET MARKET

INTRODUCTION

A protected MOSFET has incorporated transient surge prevention circuitry (a source-drain zener) and is less sensitive to electrostatic discharge and other transients than a conventional, unprotected MOSFET.MOSFETs are voltage-controlled devices, which means that while they are in a constant on or off state, no current passes through the gate.

Therefore, there is also no power usage. Logic circuits or microcontrollers are typically utilised to generate the switching signal required to activate transistors.The ability to regulate the voltage and current flow between the source and drain terminals is the fundamental feature of a MOSFET device.

The MOS capacitor underlies the device's operation, operating much like a switch. The main component of a MOSFET is a MOS capacitor. 

GLOBAL AUTOMOTIVE SELF-PROTECTED MOSFET MARKET SIZE AND FORECAST

The Global automotive self-protected MOSFET market accounted for $XX Billion in 2022 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2023 to 2030.

NEW PRODUCT LAUNCH

ON Semi Launches Automotive-Qualified Self Protected Low-Side MOSFET Driver ICs.A low-side protected MOSFETs with high levels of integrated protection were introduced by ON Semiconductor.

Devices in the NCV840x family are well suited for use in switching applications operating in challenging automotive and industrial settings since they are qualified in line with the AEC-Q101 standard.

The NCV8401, NCV8402, NCV8402D (dual die), NCV8403, and NCV8405 all contain a wide range of self-protection features and are built for durable and dependable operation.

These include integrated drain-to-gate clamping for overvoltage protection, temperature and current limiting, electrostatic discharge (ESD) defence, and ESD protection.

Design engineers can replace electromechanical relays or discrete circuits with a solution that is more compact, robust, and has a longer operating life using NCV840x drivers to switch a variety of resistive, inductive, and capacitive loads. There is a logic level input on each device.

The drain-to-source voltage rating (VDSS) and maximum drain currents (ID) of the NCV8401, NCV8402/D, and NCV8403 are 42V, 33V, and 2A, respectively. The highest ID rating for the NCV8405 is 6A, and it is rated to 40 VDSS.

The average device's gate-to-source voltage is 14 volts.The devices' operational temperatures range from 40 to 150 °C, and they all have high electro-static resistance values (4000V at a junction temperature of 25 °C). When VGS is 5V, the turn-off temperature limit is 175°C, and when VGS is 10V, it is 165°C.

COMPANY PROFILE

• ON Semiconductor
• Infineon Technologies
• Diodes
• STMicroelectronics
• Nexperia

THIS REPORT WILL ANSWER FOLLOWING QUESTIONS

1. How many automotive self-protected MOSFET are manufactured per annum globally? Who are the sub-component suppliers in different regions?
2. Cost breakup of a Global automotive self-protected MOSFET and key vendor selection criteria
3. Where is the automotive self-protected MOSFET manufactured? What is the average margin per unit?
4. Market share of Global automotive self-protected MOSFET market manufacturers and their upcoming products
5. Cost advantage for OEMs who manufacture Global automotive self-protected MOSFET in-house
6. key predictions for next 5 years in Global automotive self-protected MOSFET market
7. Average B-2-B automotive self-protected MOSFET market price in all segments
8. Latest trends in automotive self-protected MOSFET market, by every market segment
9. The market size (both volume and value) of the automotive self-protected MOSFET market in 2023-2030 and every year in between?
10. Production breakup of automotive self-protected MOSFET market, by suppliers and their OEM relationship