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A double-diffused “reach-through” structure is used in the Excelitas C30927 line of Avalanche Photodiode (APD) Arrays and Quadrants to virtually eliminate dead space between pixels for best performance.
At 400–1000 nm, this structure offers extremely high sensitivity. When enough electrical force is given to a material, the avalanche effect is defined as “the abrupt quick increase in the current in a non conducting material (insulator) or semiconducting substance (semiconductor)”.
The avalanche effect (also known as the zener effect) is created using a device called a zener diode.)A quadrant photodiode has four distinct active areas on a single detector.
With respect to the position of light on the detector, each segment provides a current output. Applications requiring precise position detection and alignment are best served by this setup.
The Global Avalanche Photodiode Quadrants market accounted for $XX Billion in 2022 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2023 to 2030.
Avalanche Photodiodes (APDs) are available from Excelitas in both silicon (Si) and ingas materials. Si APDs have a spectrum range of 400 to 1100 nanometers, while InGaAs APDs have a range of 950 to 1550 nanometers.
Avalanche Photodiodes (APDs) are used for extreme low-level light (LLL) detection and photon counting because they are more sensitive than regular photodiodes.
Sensitivity will increase in many applications when APDs are used instead of PIN photodetectors. APDs are generally helpful in applications where the amplifier’s noise level is high, for instance, significantly higher than the noise level in the PIN photodetector
For applications needing high-speed and low-noise photon detection from 400 nm up to 1100 nm, high performance rear entry “reach-through” silicon APDs present the optimum cost-performance trade-off.
These Si APDs maintain a relatively low working voltage while offering low noise, good quantum efficiency, and high gain. The active region ranges in size from 0.5 to 3 mm.
The broad-bandwidth, low-light-level applications of the large-area, UV-enhanced Silicon Avalanche Photodiodes (Si APDs) span the spectral spectrum from below 400 to over 700 nm.
These Si APDs come in flat-pack packaging and have low noise, low capacitance, and high gain..
