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For complicated, power-hungry applications, single chips with bipolar, CMOS, and DMOS BCD power FET transistors are available.
The BCD power FETsuper-integrated circuit, and it had a control range of up to 60V-5A at 300 kHz. This process method was subsequently widely used in automotive, computer, and industrial applications, allowing chip designers to reliably and flexibly mix power, analog, and digital signal processing.
The most demanding applications, such as the automotive, aerospace, and some industrial markets, can be best served by ability to modify its BCD power FET technology.
Considering all of the unique characteristics of the intended application from its earliest stages of development.
The Global BCD power FET market accounted for $XX Billion in 2022 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2023 to 2030.
Different types of power management integrated circuits are available.
Even if limit them to voltage regulators, we still need to distinguish between controllers and fully functional voltage regulator ICs that have the driver stage and power transistor built right into the chip.
However, genuine monolithic regulators demand specialized processes capable of combining signal and power transistors on board. Controllers can be created in any process technology.
Researchers will concentrate on this group of specialized power IC processes .
One such method is the BCD power FET technology, which combines CMOS for dense signal processing and DMOS for power handling with bipolar transistors for precision applications.
A cross section of a typical low voltage BCD power FETprocess is shown in Naturally, demonstrating the power of a monolithic planar process, which can produce a staggering array of devices simultaneously on the same surface of a die and with a single manufacturing procedure.
Many applications, including motherboard DC-DC voltage regulator applications, are suitable for this method.
An excellent level of energy efficiency and high integration that mixes analog circuits and digital content, as well as power devices and embedded NVMs, are made possible by BCD power FET technology, which produces power IC designs of up to 100V working voltage.
BCD power FET nodes vary from 0.5um to 110nm, with product offerings that encompass all electronic applications such as consumer, computing, communication, industrial, and automotive.
These devices include LV MOS, HV DMOS, Mixed-Signal and Analog devices, passive devices, and embedded non-volatile memory.
