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The bi-GaN family of bi-directional GaN HEMT devices enable quick charging without the risk of reliability-limiting and hazardous temperature increases. In some cases, when fast charging classic silicon devices, both of these impacts are noticeable.
The bi-GaN components can be utilized within phone handsets to regulate the currents that flow into and out of the battery. Mobile phones typically employ silicon MOSFETs as their power switches, and this advancement represents the first time that protection based on GaN technology has been built into the phone itself as opposed to the circuitry found inside the charger.
Bi-directional switching of the battery’s charging and discharging currents is possible thanks to the low RDS(on), which allows a single Bi-GaN HEMT to replace two back-to-back coupled NMOS MOSFETs in a common-source arrangement.
The Global Bi-directional GaN HEMT device market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2022 to 2030.
The Bi-GaN series of bi-directional GaN HEMT devices from Innoscience Technology, a company founded to build a global energy ecosystem based on high-performance, low-cost gallium-nitride-on-silicon power solutions, save space and enable fast charging without experiencing reliability-limiting and potentially hazardous temperature increases that can occasionally be seen in conventional silicon devices.
The new BiGaN components inside OPPO’s phone handset are being used by Innoscience to regulate the charging and discharging currents of the battery.. Previously, the circuitry had to be built into the charger. This is the first time that such protection, based on GaN technology, has been integrated into the phone itself.
Cell phones have traditionally employed silicon MOSFETs as their power switches. However, these conventional components not only take up a lot of room on the main PCB of a cell phone, where every millimeter matters, but they may also cause significant temperature increases and power losses during fast-charging. High frequency, high efficiency, and low resistance are favorable properties of InnoGaN that are essential for effective charging.
