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A Critical Dimension SEM (CD-SEM: Critical Dimension Scanning Electron Microscope) is a dedicated system for measuring the dimensions of the fine patterns formed on a semiconductor wafer.
CD-SEM is mainly used in the manufacturing lines of electronic devices of semiconductors. Scanning electron microscope measurement of width and shape of 10nm patterned lines using a JMONSEL-modelled library. Ultramicroscopy.
Sometimes it’s a diamond, or an oval, or simply an asterisk next to the dimension. Three main CD-SEM features that differ from the general-purpose SEM:CD-SEM primary electron beam irradiating to the sample has low energy of 1keV or below.
Lowering the energy of the electron beam of CD-SEM can reduce the damage to the sample due to charge-up or electron beam irradiation.
CD-SEM measurement accuracy and repeatability is guaranteed by improving magnification calibration to the maximum extend. Measurement repeatability of CD-SEM is around 1% 3σ of the measurement width. Fine pattern measurements on the wafer are automated.
A sample wafer is put inside a wafer cassette (or a Pod / FOUP), which is placed on the CD-SEM. The condition and procedures of the dimensional measurement are input into a recipe* in advance.
When the measurement process is started, the CD-SEM will automatically take the sample wafer out of the cassette, load it into the CD-SEM and measure the desired positions on the sample. When the measurement is finished, the wafer will be returned to the cassette.
Global critical dimension scanning electron microscope market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
Recent developments in scanning electron microscope design. some improvements in scanning electron microscope (SEMs) resolution with respect to the redesign of its electron lenses.
By suitably redesigning a SEM’s electron lenses, the on-axis aberrations of the objective lens have typically been reduced by over one order of magnitude, and the resolution has been improved by more than a factor of three.
Significant progress has been made, particularly with respect to low voltage scanning electron microscopy. Another area of development is the miniaturisation of the scanning electron microscope.
Miniature high-resolution electrostatic columns have been proposed for low-voltage applications that measure only a few millimetres high, while permanent magnet miniature columns have been designed that have heights less than 100 mm.
