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In the realm of microfabrication and semiconductor production, deep oxide etching is a technique used to produce accurate and controlled etch patterns in silicon and other materials. It is a highly specialized method that removes a significant quantity of material from the surface, creating features that are deep and clearly defined.
Plasma etching systems are frequently used for deep oxide etching because they use reactive gasses to chemically react with the material and remove it selectively. The well regulated method enables the construction of elaborate and complicated structures with large aspect ratios.
Deep oxide etching has a wide range of uses, including the creation of integrated circuits, sensors, optical devices, and microelectromechanical systems (MEMS). For the creation of cutting-edge semiconductor devices like microsensors, microfluidic channels, and three-dimensional integrated circuits, the capacity to produce deep, thin, and accurate structures is essential.
The Global Deep Oxide Etching System Market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
A high-performance plasma etcher for deep oxide etching, the Endura Deep Oxide Etch system was introduced by Lam Research. The TWINSCAN NXT:1950i Deep Silicon Etching System, a high-throughput plasma etcher for deep silicon etching, was introduced by Tokyo Electron.
The DISCO Genesis ICP Deep Etching System, a high-precision plasma etcher for deep oxide etching, was introduced by Applied Materials.
