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Deep Silicon Etching (DSiE), also known as Deep Reactive Ion Etching of Silicon (DRIE), is a highly anisotropic etching technique used to make deep pits and holes in wafers and other substrates, frequently with large aspect ratios.
The Bosch and Cryogenic Processes are the two methods utilised in the manufacture of Micro-Electro-Mechanical Systems (MEMS) to obtain deep engravings. Although system and process development over a long period of time has allowed for the advancement of approaches, the core elements of each remain the same.
The Global Deep Reactive Ion etch market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2022 to 2030.
In order to meet a wide range of process needs in the Micro Electromechanical Systems (MEMS), Advanced Packaging, and Nanotechnology businesses, the PlasmaPro 100 Estrelas platform is made to offer complete flexibility for Deep Reactive Ion Etching (DRIE) applications.
The PlasmaPro 100 Estrelas, which was created for research and mass production, provides the utmost versatility with Bosch and Cryogenic processes.
Good etch rate and high selectivity with Bosch method are some of the benefits. processes with a smooth sidewall and a high aspect ratio high degree of vertical anisotropy, Nano-silicon etch and notch control (SOI) at low rate, low power through engravings, tapered a variety of applications,
Depending on the compatibility of the substrates, mechanical or electrostatic clamping an increase in reproducibility, lengthened the mean time between cleans (MTBC).
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