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Doping in the manufacture of semiconductors refers to the purposeful introduction of impurities into an inherent semiconductor with the goal of modifying its structural, optical, and electrical properties.
An extrinsic semiconductor is the term used to describe the doped substance.A semiconductor’s capacity to conduct electricity can vary with the addition of a few dopant atoms.
When a semiconductor is doped, the permissible energy levels are introduced into the crystal’s band gap, but very near the energy band that corresponds to the dopant type. In other words, electron acceptor impurities produce states close to the valence band, whereas electron donor impurities produce states close to the conduction band.
The Global doped films market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
First-principles calculations and experimental research combined to examine doping of ultra-thin Si films. Considering doped Si films with two distinct doping concentrations, quantum confinement-induced bandgap widening has been examined.
Dopant formation energy development that is thickness-dependent is also retrieved for thin films. The results clearly show that doping thinner films is more challenging and that dopant positioning near the surface is energetically more advantageous than core dopants.
But compared to the surface dopant, the core dopant produces a larger density of states. Dopant-induced states above the conduction band edge and changes to the intrinsic film states can be seen when the carrier states in the doped Si film are projected onto those of a reference intrinsic film.
Additionally, the ex situ phosphorus-doped ultra-thin Si-on-oxide with a thickness of 4.5 nm by the beam-line ion implantation technique was used to experimentally evaluate the ab initio predictions.
The thickness of the Si coating on oxide has been established by high-resolution transmission electron microscopy.
The effective dopant activation energy of the ion-implanted phosphorus dopant was determined by temperature-dependent electrical characterization on the transfer length method test structures to be 13.5 meV, which is consistent with our theoretical predictions for a similar film thickness.
This paves the door to achieving the technology required for the next generation of Si-based electronic devices, which depend on ultra-thin Si films.
