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Microelectronics pattern size reduction calls for the progressive use of electron-beam technologies. There are extra difficulties with integrated optics and GaAs technology.
Any e-beam technique’s measurement accuracy is controlled by several factors, including the instrument’s quality, the signal creation process, and charging effects. It is possible to operate at both high and low voltages, and both have a variety of uses. Although low-voltage operation necessitates modifications to the electron optics, charge and damage are kept to a minimum.
The Global e-beam metrology system market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
The eBeam Metrology System from Applied Materials launched a new strategy for patterning advanced logic and memory chips. Each of the billions of tiny features that make up modern chips must be precisely designed and aligned in order to produce functional transistors and interconnects with the best possible electrical properties. Advanced chips are constructed layer by layer.
A corresponding metrology breakthrough is required to perfect each crucial layer and enable the highest performance, power, area-cost, and time to market (PPACtTM), as the industry shifts more and more from straightforward 2D designs to aggressive multi patterning and 3D designs.
The alignment of die patterns with “proxy targets,” which are guide markers printed into the spaces between die that are removed from the wafer during die singulation, has traditionally been accomplished using optical overlay techniques. In addition to statistical sampling of a small sample of die patterns from all over the wafer, proxy target approximation has been used.
The conventional approach is producing measurement flaws, or “blind spots,” which are making it more challenging for engineers to correlate intended patterns with on-die results. This is due to successive generations of feature shrinking, a wider adoption of multi patterning, and the introduction of 3D designs that cause interlayer distortions.
Customers are switching to a new patterning control plan based on big data as a result of the introduction of new eBeam system technology, which can rapidly measure semiconductor device structures directly across the wafer and through layers.
The PROVision® 3E system, Applied’s most recent eBeam metrology advancement, is tailored specifically for this new playbook. Applied Materials, the pioneer of eBeam technology, is providing our clients with a new playbook for patterning control that is tailored for the most sophisticated logic and memory devices.
The PROVision 3E system’s resolution and speed enable it to look through optical metrology’s blind spots and take precise measurements across a wafer and between the several layers of a chip.
