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A type of semiconductor material with a higher energy bandgap than conventional semiconductors like silicon (Si) is referred to as wide bandgap semiconductor wafers. The energy bandgap in a semiconductor material is the difference in energy between the valence band, which is the highest energy level inhabited by electrons, and the conduction band, which is the lowest energy level unoccupied by electrons.
Silicon has a bandgap of roughly 1.1 eV, while wide bandgap semiconductors often have bandgaps of more than 2 eV. Gallium nitride (GaN), silicon carbide (SiC), and gallium oxide (Ga2O3) are a few examples of wide bandgap semiconductors. These materials’ wider bandgap has a number of benefits over conventional semiconductors. Among the main advantages are: Higher breakdown voltage: Wide bandgap semiconductors are excellent for high-power and high-voltage applications because they can endure greater electric fields before breaking down.
Greater operating temperature: Compared to silicon, wide bandgap materials have better thermal conductivity and can work at higher temperatures, allowing them to withstand more difficult conditions. Increased switching frequencies: Wide bandgap semiconductors have quicker switching times, enabling more effective power conversion and fewer energy losses. Higher power density: Wide bandgap materials’ special features make it possible to create smaller, lighter devices with higher power densities.
Wide bandgap semiconductors are becoming more popular in a variety of applications, including power electronics, RF devices, solid-state lighting (LEDs), photovoltaic cells, and high-frequency/high-temperature electronics, as a result of these benefits. Compared to conventional semiconductor materials, they offer better performance, energy efficiency, and reliability.
The Global Wide Band Gap Semiconductor Wafer Market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
The next-generation G10-SiC 200-mm product solution for silicon carbide is released by AIXTRON. Epitaxythe 13th of September 2022 in Herzogenrath For the high-volume production of the newest generation of Silicon Carbide (“SiC”) power devices, AIXTRON SE unveiled its new G10-SiC 200 mm system.
This high-temperature CVD system was just unveiled at the International Conference on Silicon Carbide and Related Materials (ICSCRM), which is presently taking place in Davos, Switzerland. It advances innovation to a new level. SiC, a material with a broad bandgap, is expected to be widely used in future power electronics.
SiC makes a significant contribution to our modern society’s decarbonization and promotes climate protection. The need to minimize dependence on oil supplies is fueling an increase in the demand for SiC wafers, which is being driven by the increasing use of SiC-based power semiconductors in electromobility solutions.
