ELECTRIC VEHICLE SILICON CARBIDE POWER DEVICES MARKET

INTRODUCTION OFELECTRIC VEHICLE SILICON CARBIDE POWER DEVICES MARKET

Silicon carbide (SiC) power devices have recently found their place in the electric vehicle (EV) industry due to their superior electrical properties such as high temperature operation, high thermal conductivity, and low ON-resistance.

Compared to traditional silicon power MOSFETs and other components used in EVs, SiC devices offer a significant improvement in performance, size reduction, and cost savings.

This is especially important since electric vehicles are constantly becoming more sophisticated requiring extensive use of electronics for diagnostic, control systems and varying charging needs. 

SiC has two different types of polytypes: 4H-SiC with better electron mobility allowing higher switching speeds and lower junction temperatures; and 6H-SiC offering higher blocking voltages that further simplifies designs for EV applications.

SiC transistors can sharply reduce losses even at high switching frequencies while operating at significantly lower temperatures compared to their Silicon counterparts.

This enables cooling systems to be made simpler or eliminated altogether which can further reduce costs for the EV manufacturer making these vehicles more attractive to consumers. 

In addition to enhancing cost efficiency of EVs, using SiC over Silicon reduces overall losses related to conversion through improved efficiency as well as reduced heat radiation for improved safety when handling these items due to the high heat resistance of SiC.

Electric vehicles are the future, as they become increasingly cost effective and reliable with higher performance devices like SiC power devices playing an important role in order to continue this trend.

ELECTRIC VEHICLE SILICON CARBIDE POWER DEVICES MARKET SIZE AND FORECAST

The Global Electric vehicle silicon carbide Power devices market accounted for $XX Billion in 2022 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.

ELECTRIC VEHICLE SILICON CARBIDE POWER DEVICES MARKETNEW PRODUCT LAUNCH

This is the first 650V, 70mohm SiC MOSFET to be released by Tesla as part of its new Silicon Carbide (SiC) power device technology.

The Tesla 650V, 70mohm SiC MOSFET is designed to deliver higher system performance across a wide variety of automotive and industrial applications.

Its low on-resistance allows for increased power efficiency compared to existing silicon devices, while its higher breakdown voltage capabilities helps reduce system losses when needed.

In addition, the device features a lower gate charge that enables faster switching times and reduced conduction losses with elevated temperature capabilities.

Finally, owing to its superior switching characteristics and redundancy capabilities compared with other silicon-based technologies, the SiC MOSFET allows for increased system scalability with modern requirements including high current / wide bandgap semiconductor designs like class D audio amplifiers which can become bottlenecked by traditional semiconductor technologies. 

The STMicroelectronics 800V, 45mOhm SiC MOSFET is a single-chip MOSFET (metal-oxide-semiconductor field-effect transistor) that is designed for efficient and resilient use in electric vehicle powertrain systems.

With a rugged package, this MOSFET provides excellent thermal management thanks to its low on-state resistance and high current ratings.

In addition, this device features dedicated fast reverse current protection and soft turn on/off characteristics, making it suitable for applications operating at high temperatures or with large switching currents.

The SiC MOSFET also comes equipped with a drain-source dielectric breakdown voltage of 800V, allowing it to withstand high voltage spikes for improved reliability.

With its low conduction and switching losses, the STMicroelectronics 800V, 45mOhm SiC MOSFET is an ideal choice for high-power automotive applications.

ELECTRIC VEHICLE SILICON CARBIDE POWER DEVICES MARKETCOMPANY PROFILE

• Infineon Technologies 
• STMicroelectronics 
• Wolfspeed (Cree Inc)
• Rohm Semiconductor
• Fuji Electric Co., Ltd

ELECTRIC VEHICLE SILICON CARBIDE POWER DEVICES MARKETTHIS REPORT WILL ANSWER FOLLOWING QUESTIONS

1. How many Electric vehicle silicon carbide Power devices are manufactured per annum globally? Who are the sub-component suppliers in different regions?
2. Cost breakup of a Global Electric vehicle silicon carbide Power devices and key vendor selection criteria
3. Where is the Electric vehicle silicon carbide Power devices manufactured? What is the average margin per unit?
4. Market share of Global Electric vehicle silicon carbide Power devices market manufacturers and their upcoming products
5. Cost advantage for OEMs who manufacture Global Electric vehicle silicon carbide Power devices in-house
6. key predictions for next 5 years in Global Electric vehicle silicon carbide Power devices market
7. Average B-2-B Electric vehicle silicon carbide Power devices market price in all segments
8. Latest trends in Electric vehicle silicon carbide Power devices market, by every market segment
9. The market size (both volume and value) of the Electric vehicle silicon carbide Power devices market in 2024-2030 and every year in between?
10. Production breakup of Electric vehicle silicon carbide Power devices market, by suppliers and their OEM relationship