By submitting this form, you are agreeing to the Terms of Use and Privacy Policy.
STT-MRAM embedded for cost- and energy-efficient mobility systems STT-MRAM is a nonvolatile memory that supports logic and can combine fast speed, low energy, and great endurance.
The second-generation MRAM technology, known as STT-MRAM, flips the electron spin using spin-polarized current.
STT-MRAM chips outperform Toggle-MRAM in terms of speed, marketability, and efficiency (first-gen MRAM tech). STT-MRAM devices are currently being sold on the market by numerous businesses.
The Global Embedded STT-MRAM market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
The newest, highest-density STT-MRAM from Everspin Technologies, Inc., the world’s top creator and manufacturer of Magnetoresistive Random Access Memory (MRAM) permanent memory solutions, has been given engineering samples.
This product offers double the capacity of the previously disclosed 64Mbit EM064LX and supports the Expanded SPI standard protocol.
The ability to combine code and data memory on the same device gives system designers the option of saving money, power, and space thanks to the higher density and up to 233 megabytes/second full read and write bandwidth.
The EM128LX will give FPGA system designers incredibly quick configuration, instant-on startup capability, and quick updates of crucial application parameters like weighting because of its ultra-fast write performance and data permanence.
There are two widely used package options for the EM128LX: an 8-pin DFN and a 24-ball BGA. Advanced Spin-transfer Torque MRAM (STT-MRAM) from Everspin offers almost limitless write cycle endurance and over ten years of data retention. It also has the xSPI interface, which supports NOR Flash and serial SRAM working modes.
