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In order to create innovative FET configurations, such as extended-gate FETs (EGFETs) or EG organic FETs (EGOFETs), enzyme-based field-effect transistors (EnFETs) provide the foundation. The EnFETs’ underlying mechanism, originally proposed by Bergveld in 1970, is an ion-selective FET (ISFET) modified with an enzyme membrane.
EnFETs are classified as bioelectronic devices that work by linking an ISFET and an enzyme layer. [18,20] Bergveld created the ISFET in 1970 to serve as the first chemical sensor based on miniaturised silicon.
[21] An ISFET has three terminals, namely the source, drain, and gate.The device consists of an ap-doped semiconductor body, substantially n-doped source and drain, a modified intermediate region coated in a dielectric layer (such as SiO2 produced through thermal oxidation of silicon), and an insulator layer on the gate surface.
Global enzyme field effect transistor (ENFET) market accounted for $XX Billion in 2022 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2023 to 2030.
Researchers are interested in bioelectronic sensors made with semiconductor technology because they offer a wide range of applications in fields like biotechnology, defence, medicine, and food security.
The fundamental theoretical underpinnings of enzyme-modified field effect transistors (ENFETs), which are employed as bioelectronic sensors, as well as its operational and modelling principles.
They propose a triple-gate amorphous indium gallium zinc oxide (a-IGZO) thin-film pH ion-sensitive field-effect transistor (EnFET) as a very sensitive transparent urea enzymatic field-effect transistor (POC) diagnostic test sensor (ISFET).
The EnFET sensor is made up of an a-IGZO thin film transistor (TFT), which serves as the detector, and a urease-immobilized tin-dioxide (SnO2) sensing membrane extended gate (EG), which serves as the transducer.
A triple-gate a-IGZO TFT transducer with a top gate (TG) at the top of the channel, a bottom gate (BG) at the bottom of the channel, and a side gate (SG) on the side of the channel was created to increase the urea sensitivity.
By creating a urea-EnFET sensor with an EG separate from the FET transducer, it is possible to solve the fundamental chemical damage problem of the gate insulator in a FET transducer.
The low-cost EG (disposable detector) may be readily changed out in this design, allowing the continuing use of expensive and advanced FET transducers without sustaining any damage, which is projected to result in a cost-effective sensor device. created a transducer unit based on a triple-gate amorphous indium gallium zinc oxide (a-IGZO) thin film transistor on a glass substrate to develop a transparent urea-EnFET sensor.
