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Extreme ultraviolet lithography, sometimes referred to as EUV or EUVL, is an optical lithography technique used in the production of integrated circuits from semiconductor devices (ICs). A CO2 laser fires two distinct laser pulses at a moving drop of tin to produce extreme ultraviolet (EUV) light. This causes the tin to evaporate and emit EUV light.
The most expensive process in creating the cutting-edge microchips that drive data centres, automobiles, and iPhones is EUV lithography. Only one business, Advanced Semiconductor Materials Lithography, manufactures the equipment.
By lowering mask counts and enabling more two-dimensional designs to be printed than multiple patterning, EUV offers significant advantages in terms of process ease. The motivation to switch from multiple patterning will come from these advantages.
The Global EUV Drive Laser market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
The development of laser-produced plasma EUV light source.It has been proven that extreme ultraviolet lithography (EUVL) satisfies the industrial standards for the production of new-generation semiconductors.
The use of EUVL in high-volume manufacturing (HVM), along with other technologies like photoresist and mask, is facing a long-term crucial problem related to the development of high-power EUV sources.
The CO2 laser-produced plasma (LPP) system is a potential option for EUVL source, able to realise high conversion efficiency (CE) and output power, according to historical theoretical studies and experiments.
At chipmaker clients, the NXE:3400B EUV scanner setting CO2 LPP source system has been deployed and is in use. Other research teams, meantime, have made various advancements in the creation of LPP EUV sources. To meet the demands of 5 nm nodes and below, their technologies still need to be enhanced in a few key areas.
More laser power, a robust droplet generation system, and a longer collector lifetime are all urgently needed upgrades. enumerate the performance features of the laser system, droplet generator, mirror collector, and novel development findings for various EUV sources.
