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Silicon carbide inverters are a type of power electronic device that are used to convert direct current (DC) electricity into alternating current (AC) electricity. They employ the use of semiconductor materials such as silicon carbide (SiC) in order to increase the efficiency of the conversion process.
Compared to traditional silicon-based inverters, SiC inverters are more compact, lighter, and capable of operating at higher temperatures and frequencies.
SiC inverters also have less losses and improved power density, allowing them to be used in a variety of applications such as electric vehicles, uninterruptible power supplies, renewable energy systems, and industrial automation.
SiC inverters are more reliable and efficient than traditional silicon-based inverters due to their superior thermal, electrical, and mechanical properties. Their high breakdown voltage makes them more suitable for high-voltage systems, and their low switching losses allow them to operate at higher frequencies, reducing the size of the components.
SiC inverters also have a low on-resistance, meaning they can handle heavy loads with less power loss. Additionally, their high heat dissipation capabilities help to reduce heat buildup, which helps to increase their lifespan.
Due to their improved efficiency, SiC inverters are becoming increasingly popular for a variety of applications. By using SiC inverters, users can decrease their energy consumption and improve their system’s overall performance, leading to cost savings and increased efficiency. Furthermore, their compact design and wide range of available voltages make them a great choice for many modern applications.
The Global EV Silicon carbide inverter market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
The highly adaptable 800V Silicon Carbide (SiC) inverter IPG5-x, developed by British engineering and technology pioneer McLaren Applied, can be integrated into Electric Drive Units (EDUs). With an emphasis on meeting the increasing demands of OEMs for cost-effective, high-performing integrated EDUs that save space, the IPG5-x is designed to operate with a range of motors and transmissions, particularly in performance-oriented applications.
In addition to the IPG5-x, a modified version of McLaren Applied’s existing IPG5 800V SiC inverter will also be available; the latter’s use will be contingent upon client requirements. IPG5-x is a product meant to work with partners who want to quickly and affordably bring EDU products to market, which is why the ‘x’ suffix was selected.
To jointly develop an integrated EDU for their first customer vehicle application, McLaren Applied is collaborating with transmission provider Tremec and holding discussions with multiple OEMs and Tier 1 suppliers. McLaren Applied’s IPG5-x, which maximizes the benefits of SiC semiconductors, offers best-in-class fine motor control and high efficiency through continuously variable switching frequencies.
It is derived from decades of innovation in elite automotive and motorsports. Leading the way are models built on specialized 800V SiC architectures, which create a positive feedback loop: an efficient drivetrain by nature requires a smaller battery, which reduces the vehicle’s cost, weight, and operating and embedded carbon footprint. Additionally, it shortens charge times and extends range, fostering greater confidence in the technology.
Leading mobility supplier Denso Corporation announced it has created the first-ever silicon carbide (SiC) semiconductor-based inverter. The new Lexus RZ, the manufacturer’s first dedicated battery electric vehicle (BEV) model, will use this inverter, which is integrated into the eAxle, an electric driving module developed by Blue Nexus Corporation when it is released.
In comparison to silicon (Si) power semiconductors, SiC power semiconductors, which are made of silicon and carbon, have a much lower power loss. Inverters with SiC power semiconductors reduce power loss by less than half compared to those with Si semiconductors, according to a cruising test carried out under particular conditions by BEV.
Consequently, BEVs’ cruising range is increased and their energy efficiency is enhanced. With DENSO’s exclusive trench-type metal-oxide-semiconductor (MOS) structure, SiC power semiconductors decrease heat-related power loss while increasing output per chip. Low on-resistance and high voltage operation were made possible by the special structure.
