By submitting this form, you are agreeing to the Terms of Use and Privacy Policy.
A semiconductor device with a quick reverse recovery time is referred to as a fast recovery diode (also known as a fast switching diode). Fast recovery diodes are better suited for high-frequency rectification applications due to their shorter reverse recovery time than conventional diodes.
Fast recovery diodes are frequently utilized in high-frequency applications due to their quick shutoff time.Quick recuperation diodes are utilized in high-recurrence changing around to 100 kHz. The diode cannot withstand voltage until it enters reverse bias when applied voltage is applied in the opposite direction.
The current flows for a specific amount of time under conditions of reverse bias.Reverse recovery time, or TRR, refers to this amount of time.
A fast recovery diode typically has a reverse recovery time (TRR) that ranges from tens of nanoseconds to one hundred nanoseconds.In contrast, a conventional diode’s reverse recovery time ranges from a few microseconds to tens of microseconds.
For rectification, fast recovery diodes are typically utilized.A low-frequency AC (sine) signal is transformed into a DC signal when it is present.
The time period is long in a low-frequency signal.Because of this, the signal will take longer to finish the cycle.As a result, the conventional diode has ample time to alter its state during this signal’s positive and negative half cycles.
Gallium-Arsenide (GaAs) is a semiconductor used to make the conventional diode.Gallium-Arsenide is added to the gold (Au) in a fast recovery diode. The reverse recovery time is decreased by including gold as a semiconductor material.As a result, it can rapidly transition from a positive to a negative half cycle.Additionally, it can be utilized in high-frequency settings.
The global fast recovery diodes market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
The RFL/RFS series of ROHM’s 4th Generation 650V fast recovery diodes (FRDs) feature ultra-low noise characteristics in addition to low forward voltage (VF) and fast reverse recovery time (trr).Appliances that use a lot of power, like air conditioners and electric vehicle charging stations, are ideal applications for the new devices.
To keep up with the rise in global power consumption over the past few years, it has become necessary to make better use of electricity.This is especially true for industrial and white goods that handle a lot of power, like EV charging stations.
These necessitate not only high electrical efficiency but also a reduction in circuit design workload for noise countermeasures.ROHM responded by developing diodes with fast trr characteristics, low VF for more efficient operation, and extremely low noise during OFF switching.
The RFL/RFS series is able to achieve the ideal balance of VF and trr, two important but trade-off characteristics for FRDs, by optimizing the device structure and materials.
The RFL series with low VF approximately reduces VF.3.2% and trr by approximately 8.3% when compared to the conventional RFN series, whereas the high-speed RFS series reduces VF approximately.17.9% higher than the standard RFUH series.
Through optimal design based on circuit requirements, both products contribute to increased power supply efficiency.In addition, ultra-low noise diode recovery characteristics are achieved, assisting in the reduction of components for noise and workload.
ROHM will continue to expand the RFL/RFS series’ package lineup in order to provide support for automobiles and reduce power consumption while expanding applicability.
