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A floating-gate MOSFET (FGMOS), also known as a floating-gate MOS transistor or a floating-gate transistor, is a type of metal–oxidesemiconductor field-effect transistor (MOSFET) in which a number of secondary gates or inputs are deposited above the floating gate (FG) and are electrically isolated from it.
This creates a floating node in direct current. The FG is only connected capacitively to these inputs.The FG’s charge does not change over long periods of time, typically longer than ten years, because it is surrounded by highly resistive material.
To alter the amount of charge stored in the FG, hot-carrier injection and Fowler-Nordheim tunneling mechanisms are typically utilized.
In EPROM, EEPROM, and flash memory technologies, the FGMOS is frequently utilized as a floating-gate memory cell.The FGMOS can also be used as an analog storage element, digital potentiometer, single-transistor DAC, and a neuronal computational component in neural networks.
The Global floating gate MOSFET market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
A brand-new device-level micro-model for floating-gate MOSFETs (FGMOSFETs) that is free and open source and aims to make accurate analog circuit design easier. The Fowler–Nordheim tunneling effect charges the floating gate. Using MATLAB, the new device model’s equations were investigated and confirmed.
The equations were then combined and the complete device model was built using Verilog-A script.In a CMOS technology design library, the new FGMOSFET circuit model was plugged in as a pop-up menu component.
As a result, it can be directly instanced on a palette in a schematic editor for analog circuit simulation and design, just like standard MOSFET devices.
