GALLIUM ARSENIDE FIELD EFFECT TRANSISTOR MARKET

INTRODUCTION

 In amplifier circuits at very-high, ultra-high, and microwave radio frequencies, a gallium arsenide field-effect transistor (GaAsFET) is a specific kind of field-effect transistor (FET). This covers the range of electromagnetic radiation from about 30 MHz to the infrared band.

The GaAsFET is renowned for its sensitivity and in particular for producing a negligibly small amount of internal noise.

 This is due to the remarkable carrier mobility of gallium arsenide. The semiconductor material allows for quick and easy movement of the electrons and holes. A depletion-mode device, the GaAsFET.

This indicates that it conducts when no voltage is supplied to the control electrode (gate), and that the channel conductivity diminishes when a voltage is applied to the gate.

GALLIUM ARSENIDE FIELD EFFECT TRANSISTOR MARKET SIZE AND FORECAST 

The global gallium arsenide field effect transistor market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2022 to 2030.

NEW PRODUCT LAUNCH IN GALLIUM ARSENIDE FIELD EFFECT TRANSISTOR MARKET

Expanding Toshiba's Ku-Band Power Amplifier Lineup For Microwave Radios are New Higher Power 18W and 30W GaAs FETs. Toshiba America Electronic Components, Inc. and Toshiba Corp.

announced the addition of two higher output power devices with wattages of 18 and 30 to their array of Ku-Band gallium arsenide field effect transistors (GaAs FETs) (W). In TAEC's stand, the new power amplifier GaAs FETs will be displayed.

The new GaAs FETs, TIM1213-18L and TIM1213-30L, are intended for use in microwave radios for microwave links and satellite communications and operate in the 12.7 to 13.2 GHz range.

Other current Toshiba GaAs FETs in this frequency range have power output ratings of 2W, 4W, 8W, 10W, and 15W.The TIM 1213-18L has a power efficiency of 28%, output power at 1dB gain compression point (P1dB) of 42.5 dBm (typical), power gain at 1dB gain compression point (G1dB), and 6.0 dB (typical).

P1dB is 45.0 dBm (typical), G1dB is 5.5 dB (typical), and power added efficiency is 23% for the TIM 1213 - 30 L.

KEY PLAYER IN GALLIUM ARSENIDE FIELD EFFECT TRANSISTOR MARKET

• AXT Inc., 
• Semiconductor Wafer Inc., 
• Freiberger Compound Materials GmbH, 
• Xiamen Powerway Advanced Material Co. Ltd. 
• Toshiba  

THIS REPORT WILL ANSWER FOLLOWING QUESTIONS

1. What is the average cost pergallium arsenide field effect transistorright now and how will it change in the next 5-6 years?
2. Average cost to set up aglobal gallium arsenide field effect transistor marketin the US, Europe and China?
3. How manyglobal gallium arsenide field effect transistorsare manufactured per annum globally? Who are the sub-component suppliers in different regions?
4. What is happening in the overall public, globally?
5. Cost breakup of aglobal gallium arsenide field effect transistor marketand key vendor selection criteria
6. Where is theglobal gallium arsenide field effect transistor market manufactured? What is the average margin per equipment?
7. Market share ofglobal gallium arsenide field effect transistor marketmanufacturers and their upcoming products
8. The most important plannedglobal gallium arsenide field effect transistor marketin next 2 years
9. Details on network of majorglobal gallium arsenide field effect transistor marketand pricing plans
10. Cost advantage for OEMs who manufactureglobal gallium arsenide field effect transistorin-house
11. 5 key predictions for next 5 years inglobal gallium arsenide field effect transistor market
12. Average B-2-Bglobal gallium arsenide field effect transistor marketprice in all segments
13. Latest trends in gallium arsenide field effect transistor, by every market segment
14. The market size (both volume and value) ofglobal gallium arsenide field effect transistorin 2024-2030 and every year in between?
15. Global production breakup ofglobal gallium arsenide field effect transistor market, by suppliers and their OEM relationship