GALLIUM ARSENIDE FIELD EFFECT TRANSISTOR MARKET

INTRODUCTION

 In amplifier circuits at very-high, ultra-high, and microwave radio frequencies, a gallium arsenide field-effect transistor (GaAsFET) is a specific kind of field-effect transistor (FET). This covers the range of electromagnetic radiation from about 30 MHz to the infrared band.

The GaAsFET is renowned for its sensitivity and in particular for producing a negligibly small amount of internal noise.

 This is due to the remarkable carrier mobility of gallium arsenide. The semiconductor material allows for quick and easy movement of the electrons and holes. A depletion-mode device, the GaAsFET.

This indicates that it conducts when no voltage is supplied to the control electrode (gate), and that the channel conductivity diminishes when a voltage is applied to the gate.

GALLIUM ARSENIDE FIELD EFFECT TRANSISTOR MARKET SIZE AND FORECAST 

The global gallium arsenide field effect transistor market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2022 to 2030.

NEW PRODUCT LAUNCH IN GALLIUM ARSENIDE FIELD EFFECT TRANSISTOR MARKET

Expanding Toshiba’s Ku-Band Power Amplifier Lineup For Microwave Radios are New Higher Power 18W and 30W GaAs FETs. Toshiba America Electronic Components, Inc. and Toshiba Corp.

announced the addition of two higher output power devices with wattages of 18 and 30 to their array of Ku-Band gallium arsenide field effect transistors (GaAs FETs) (W). In TAEC’s stand, the new power amplifier GaAs FETs will be displayed.

The new GaAs FETs, TIM1213-18L and TIM1213-30L, are intended for use in microwave radios for microwave links and satellite communications and operate in the 12.7 to 13.2 GHz range.

Other current Toshiba GaAs FETs in this frequency range have power output ratings of 2W, 4W, 8W, 10W, and 15W.The TIM 1213-18L has a power efficiency of 28%, output power at 1dB gain compression point (P1dB) of 42.5 dBm (typical), power gain at 1dB gain compression point (G1dB), and 6.0 dB (typical).

P1dB is 45.0 dBm (typical), G1dB is 5.5 dB (typical), and power added efficiency is 23% for the TIM 1213 – 30 L.

KEY PLAYER IN GALLIUM ARSENIDE FIELD EFFECT TRANSISTOR MARKET

• AXT Inc., 
• Semiconductor Wafer Inc., 
• Freiberger Compound Materials GmbH, 
• Xiamen Powerway Advanced Material Co. Ltd. 
• Toshiba  

THIS REPORT WILL ANSWER FOLLOWING QUESTIONS

1. What is the average cost per gallium arsenide field effect transistor right now and how will it change in the next 5-6 years?
2. Average cost to set up a global gallium arsenide field effect transistor market in the US, Europe and China?
3. How many global gallium arsenide field effect transistors are manufactured per annum globally? Who are the sub-component suppliers in different regions?
4. What is happening in the overall public, globally?
5. Cost breakup of a global gallium arsenide field effect transistor market and key vendor selection criteria
6. Where is the global gallium arsenide field effect transistor market  manufactured? What is the average margin per equipment?
7. Market share of global gallium arsenide field effect transistor market manufacturers and their upcoming products
8. The most important planned global gallium arsenide field effect transistor market in next 2 years
9. Details on network of major global gallium arsenide field effect transistor market and pricing plans
10. Cost advantage for OEMs who manufacture global gallium arsenide field effect transistor in-house
11. 5 key predictions for next 5 years in global gallium arsenide field effect transistor market
12. Average B-2-B global gallium arsenide field effect transistor market price in all segments
13. Latest trends in gallium arsenide field effect transistor, by every market segment
14. The market size (both volume and value) of global gallium arsenide field effect transistor in 2024-2030 and every year in between?
15. Global production breakup of global gallium arsenide field effect transistor market, by suppliers and their OEM relationship