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The chemical element gallium has the atomic number 31 and the symbol Ga. The periodic table’s group 13 contains gallium, which is comparable to the other metals in the group. At normal temperature and pressure, elemental gallium is a soft, silvery metal. It turns silvery white when it’s liquid.
Gallium in solid form may shatter conchoidally if enough force is applied. Low melting point alloys have frequently been created using gallium. As a dopant on semiconductor substrates, it is also utilised in semiconductors. The temperature reference point is gallium’s melting point.
As a safer and more environmentally friendly substitute for mercury, gallium alloys are used in thermometers because they can endure higher temperatures.
The alloy galinstan is said to have a melting point even lower than that of water, at 19 °C. 62-95 percent gallium, 5-22 percent indium, and 0-16 percent tin by weight, however that could just be the freezing point due to supercooling.
Gallium does not naturally occur as a free element, but rather in trace amounts as gallium compounds in zinc ores such sphalerite and bauxite. Elemental gallium melts in a person’s hands at 37.0 °C, which is the average temperature of the human body, and is a liquid at temperatures higher than 29.76 °C.
Electronics is the primary application for gallium. The main chemical form of gallium utilised in electronics is gallium arsenide, which is utilised in infrared, high-speed switching, and microwave circuits.
The Global Gallium Market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
Baseus, a well-known brand in the local consumer electronics business, has provided customers with a variety of high-quality products thanks to its cutting-edge research and development technology and great quality.
Baseus formally launched its new Gallium Nitride Series 120W Charging Heads, setting the standard for the charging sector at 45W, 65W, and 120W. The Baseus GaN series has a half-bridge topology with two GaN MOS switches and an industrial-grade LLC resonant circuit.
Resonant inductors and capacitors, as well as output main and resonant circuit-drive transformers, are components of the LLC design.
As a result, it achieves greater efficiency when using a high-power power source. To obtain more output power and improved output efficiency, the half-bridge architecture with two GaN MOS switches demands less on the voltage withstand value of devices.
