GaN-BASED CLEAN ENERGY DEVICE MARKET

INTRODUCTION

 Gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical field, and the highest saturation velocity, thus representing an excellent material for the fabrication of high-speed/high-voltage components.

The presence of spontaneous and piezoelectric polarisation allows us to create a two-dimensional electron gas, with high mobility and large channel density, in the absence of any doping, thanks to the use of AlGaN/GaN heterostructures.

This contributes to minimising resistive losses; at the same time, for GaN transistors, switching losses are very low.

The bottom line is that GaN technology can handle larger electric fields in a much smaller form factor than conventional silicon while delivering significantly faster switching. In addition, GaN technologies can operate at higher maximum temperatures than their silicon-based counterparts.

GaN-BASED CLEAN ENERGY DEVICE MARKET SIZE AND FORECAST

Global GaN-based clean energy device market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.

GaN-BASED CLEAN ENERGY DEVICE MARKET NEW PRODUCT LAUNCH

IR Announces “Revolutionary” GaN-based Power Device Technology Platform. International Rectifier Corp. (IR) announced the successful development of what it describes as a revolutionary gallium nitride (GaN)-based power device technology platform that can provide customers with improvements in key application-specific figures of merit (FOM) of up to a factor of ten compared to state-of-the-art silicon-based technology platforms to dramatically increase performance and cut energy consumption in end applications in a variety of market segments such as computing and communications, automotive and appliances.

International Rectifier will introduce the new GaN-based power device technology platform at the Digital Power Forum ’.

The pioneering GaN-based power device technology platform is the result of five years of research and development by IR based on the company’s proprietary GaN-on-silicon epitaxial technology.

IR states that its GaN-based power device technology platform enables revolutionary advancements in power conversion solutions.

The high throughput, 150mm GaN-on-Si epitaxy, together with subsequent device fabrication processes which are fully compatible with IR’s silicon manufacturing facilities, is said to offer customers a world-class, commercially viable manufacturing platform for GaN-based power devices

GaN-BASED CLEAN ENERGY DEVICE MARKET COMPANY PROFILES

• Navitas
• Texas
• IR
• STMICROELECTRONICS
• Accel

GaN-BASED CLEAN ENERGY DEVICE MARKET REPORT WILL ANSWER FOLLOWING QUESTIONS

1. How many GaN-based clean energy device are manufactured per annum globally? Who are the sub-component suppliers in different regions?
2. Cost breakup of a Global GaN-based clean energy device and key vendor selection criteria
3. Where is the GaN-based clean energy device manufactured? What is the average margin per unit?
4. Market share of Global GaN-based clean energy device market manufacturers and their upcoming products
5. Cost advantage for OEMs who manufacture Global GaN-based clean energy device in-house
6. key predictions for next 5 years in Global GaN-based clean energy device market
7. Average B-2-B GaN-based clean energy device market price in all segments
8. Latest trends in GaN-based clean energy device market, by every market segment
9. The market size (both volume and value) of the GaN-based clean energy device market in 2024-2030 and every year in between?
10. Production breakup of GaN-based clean energy device market, by suppliers and their OEM relationship