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Gallium Nitride (GaN) micro LED arrays are a sophisticated type of LED technology that make use of these tiny LEDs grouped in an array format. GaN is a semiconductor substance that works well for tiny LED applications due to its great efficiency and brightness.
The following are some crucial issues about GaN micro LED arrays:
GaN micro LEDs are incredibly small; their size generally ranges from a few micrometers to a few hundred micrometers. Due to this miniaturization, lighting systems and displays with high resolution and far higher pixel densities than conventional LED technology are now possible.
High Brightness and Efficiency: When compared to traditional LED technology, GaN tiny LEDs offer remarkable brightness and efficiency. They are energy-efficient because they can provide more light while using less electricity.
A wider color spectrum and precise color reproduction are provided by GaN tiny LEDs, which improve color performance. They are perfect for applications like displays in televisions, smartphones, augmented reality (AR), and virtual reality (VR) devices because their capacity provides vibrant and lifelike pictures.
GaN micro LED arrays are capable of achieving incredibly tiny pixel pitches and high resolutions, which enables the generation of clear, detailed pictures. When it comes to large-scale displays, video walls, and signs, where image clarity and quality are crucial, this function is very useful.
The Global GaN Micro LED Array Market accounted for $XX Billion in 2022 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2023 to 2030.
Full-color display and large transfer are ongoing challenges for LED display systems. Full-color displays may now be made via transfer printing RGB microLEDs, exciting quantum dots (QDs), manufacturing red, green, and blue (RGB) micro-LED pixels on the same wafer, or any combination of these methods.
Despite the fact that InGaN-LEDs have been developed, it is still very difficult to grow high efficiency red LEDs because of the active region’s noticeable strain and the poor crystalline quality brought on by the significant lattice mismatch between InGaN QWs and GaN buffers.
By utilizing its unique strain engineering and polarization engineering techniques , Enkris Semiconductor has effectively overcome these challenges. Enkris increases the application of their special bandgap tuning technique in GaN-on-Si LEDs.
GaN micro-LEDs, which had a share of almost 75% in 2018, will inevitably gain popularity for lighting applications. However, the advantage of cutting its total prices is limited because a large portion of the cost of mid power micro-LEDs goes to packaging.
On the other hand, the market for low power micro-LEDs is expected to grow significantly in the next few years in order to retain full brightness without observable display brightness decrease over the whole illumination period.
