GLOBAL GaN-On-Si DEVICES MARKET

INTRODUCTION

 The upcoming power semiconductor is projected to be gallium nitride (GaN). The breakdown strength, switching speed, thermal conductivity, and on-resistance of power devices based on GaN are all higher. That implies they perform noticeably better than power chips built on silicon.

Wide bandgap semiconductor with a very high hardness is called gallium nitride (GaN). GaN-based power devices perform much better than silicon-based ones thanks to their higher breakdown strength, quicker switching speed, higher thermal conductivity, and lower on-resistance.

The fact that GaN can be produced at a cheaper cost than silicon and conduct electrons more than 1000 times more effectively than silicon is already well documented. GaN is a new, more effective semiconductor material that is gaining traction as silicon runs out of gas.As well as RF components, light-emitting diodes, and semiconductor power devices, GaN is employed in manufacturing (LEDs).

In power conversion, RF, and analogue applications, GaN has shown that it is capable of replacing silicon semiconductors.

GLOBAL GaN-On-Si DEVICES MARKET SIZE AND FORECAST

The Global GaN- On- Si devices market accounted for $XX Billion in 2022 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2023 to 2030.

GaN-On-Si DEVICE TECHNOLOGY AND APPLICATIONS

In semiconductor technology, gallium nitride (GaN) has enormous potential for a variety of high power applications. When compared to silicon-based semiconductor devices, gallium nitride is a physically tough and robust Wide Bandgap (WBG) semiconductor with quick switching speeds, a higher breakdown strength, and good thermal conductivity.

Future applications for GaN-on-Si are numerous and extend the capabilities of HEMTs with increased power levels above 1kW. With the use of this technology, engineers may boost working voltages and extend the frequency response's range from the Ka-band to the terahertz, W-band, and E-band.GaN on Si can function in simple space hard-witched mode at high frequencies and high power levels.

Low loss operation is provided, which will be important for power conversions in the next few years and have an impact on applications like servo motor drives, small EV chargers, etc.

GaN-on-Si is currently employed in satellites, robots, augmented reality systems, LIDAR for driverless vehicles, and other applications. GaN transistors and integrated circuits (ICs) are readily available commercially and 5 to 50 times faster than comparable silicon state-of-the-art devices.

COMPANY PROFILE

• Infineon
• EPC
• Innoscience
• X-fab
• Exagan

THIS REPORT WILL ANSWER FOLLOWING QUESTIONS

1. How many GaN- On- Si devices are manufactured per annum globally? Who are the sub-component suppliers in different regions?
2. Cost breakup of a Global GaN- On- Si devices and key vendor selection criteria
3. Where are the GaN- On- Si devices manufactured? What is the average margin per unit?
4. Market share of Global GaN- On- Si devices market manufacturers and their upcoming products
5. Cost advantage for OEMs who manufacture Global GaN- On- Si devices in-house
6. key predictions for next 5 years in Global GaN- On- Si devices market
7. Average B-2-B GaN- On- Si devices market price in all segments
8. Latest trends in GaN- On- Si devices market, by every market segment
9. The market size (both volume and value) of the GaN- On- Si devices market in 2023-2030 and every year in between?
10. Production breakup of GaN- On- Si devices market, by suppliers and their OEM relationship