GaN ON SOI WAFER MARKET

INTRODUCTION TOGaN ON SOI WAFER MARKET

Researchers investigated the use of SOI (Silicon On Insulator) wafers as a substrate for creating gallium nitride crystals, which are utilized as a platform for manufacturing various microelectronics components. The scientists compared the properties of GaN layers generated on SOI wafers to those grown on silicon substrates, which are more routinely employed in the technique.

This study shows that employing an SOI wafer for GaN development can result in enhanced properties in power electronics and radio applications. Manufactures SOI wafers, which include a layer of silicon dioxide insulator sandwiched between two silicon layers, in addition to high-performance silicon wafers. The goal of SOI technology is to increase the capacitive and insulating properties of the wafer.

The new RGB series offers outstanding wavelength uniformity over the whole mm wafer, and its blue LED wafers, which are available in diameters up to mm, have relatively high wavelength uniformity, with a standard deviation of less than nm.

A standardized manufacturing procedure for comparing wafer properties. GaN growth on SOI wafers resulted in a more crystalline layer than on silicon wafers. Furthermore, the SOI wafer's insulating layer enhances breakdown properties, allowing for the use of significantly higher voltages in power electronics. Losses and crosstalk can also be minimized in high frequency applications.

Based components are increasingly being used in power electronics and radio applications. The use of an SOI wafer as the substrate can increase the performance of GaN-based devices.

GaN growth on a silicon substrate is difficult. Metalorganic vapor phase epitaxy (MOVPE) can be used to produce GaN layers and devices on substrate material. When developed compound semiconductor materials are grown on silicon as a substrate, their coefficients of thermal expansion and lattice constants differ from those of a silicon wafer. 

These variations in properties restrict the crystalline quality that may be attained as well as the maximum thickness of the generated layer. The study demonstrated that an SOI wafer's layered structure may operate as a compliant substrate during gallium nitride layer development, reducing flaws and strain in the produced layers.

Blue and white LEDs frequently employ GaN-based components. GaN diodes and transistors, in particular, have attracted attention in power electronics applications, such as frequency converters and electric vehicles. 5G network base stations are expected to utilize GaN-based power amplifiers in radio applications in the future. In electronics, a GaN transistor has low resistance and allows for high frequencies and power densities.

GaN ON SOI WAFER MARKET SIZE AND FORECAST

The Global GaN On SOI Wafer Market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.

GaN ON SOI WAFER MARKETNEW PRODUCT LAUNCH

 Okmetic, the leading supplier of advanced silicon wafers for the manufacture of MEMS, sensor, RF and power devices, today announced the release of Terrace Free SOIL capability for its 200 mm Bonded Silicon-On-Insulator BSOI and E-SOI® wafers.

The Terrace Free SOI wafers provide device manufacturers with maximized usable area and enable more chips per wafer to be produced. The standard SOI terrace (non-SOI area) is ≤ 2 mm so the Terrace Free SOI wafers provide a prominent ca. 4%, increase in the active area. Also, the Fixed Quality Area (FQA) increases by ca. 3% as a result of edge exclusion area decrease from 4.5 mm to 3.0 mm.  

The Terrace Free SOI wafers edge is beveled into optimal shape to enhance compatibility with subsequent device processing. Terrace Free SOI wafers can e.g. facilitate wafer clamping and handling as well as epitaxial growth and lithography process including resist coating.

Okmetic’s motivation to develop Terrace Free SOI wafers was to meet the customer and industry needs. To be able to manufacture a fully Terrace Free SOI wafer, Okmetic needed to develop a new kind of optimized version of the established SOI process. 

Okmetic is very pleased to be able to collaborate with several pilot customers in the development phase. These customers gave valuable feedback on the Terrace Free SOI wafer prototypes, which has enabled a more rapid development phase and made the subsequent production ramp-up successful. 

Upon the launch of this Terrace Free SOIL capability, Okmetic is now ready to provide samples and start volume deliveries for a wider audience.

GaN ON SOI WAFER MARKETCOMPANY PROFILE

• Enkris
• Okmetics
• IMEC
• University Wafer
• Exagan
• Bonda Technology

THIS REPORT WILL ANSWER FOLLOWING QUESTIONS

• How many GaN On SOI Wafers are manufactured per annum globally? Who are the sub-component suppliers in different regions?
• Cost breakup of a  Global GaN On SOI Wafer and key vendor selection criteria
• Where is the GaN On SOI Wafer manufactured? What is the average margin per unit?
• Market share of Global GaN On SOI Wafer market  manufacturers and their upcoming products
• Cost advantage for OEMs who manufacture Global GaN On SOI Wafer in-house
• 5 key predictions for next 5 years in Global GaN On SOI Wafer market
• Average B-2-B GaN On SOI Wafer market price in all segments
• Latest trends in GaN On SOI Wafer market, by every market segment
• The market size (both volume and value) of the GaN On SOI Wafer market in 2024-2030 and every year in between?
• Production breakup of GaN On SOI Wafer market, by suppliers and their OEM relationship