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Integrated Circuit for Gallium Nitride Power, or GaN Power. A single integrated circuit package including power transistors made of gallium nitride (GaN), control circuitry, and other parts is referred to as the term for an electronic device.
GaN is a wide-bandgap semiconductor material that has attracted a lot of attention recently due to its better electrical qualities over those of conventional silicon-based power devices.
Power supply, motor drives, inverters, and other systems requiring high-speed switching and high-voltage handling capabilities may all be effectively handled by GaN Power ICs.
GaN power devices are superior to silicon-based ones in a number of ways, including switching losses, breakdown voltage, and operating frequencies.
The GaN Power IC accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
ON Semiconductor created the NCP51150, a 600V GaN (Gallium Nitride) Power IC (Integrated Circuit). Power supplies, adapters, industrial drives, and automotive systems are just a few of the applications for which it is intended to deliver high-efficiency power conversion solutions.
Compared to conventional silicon-based power devices, the GaN-on-Si (Gallium Nitride on Silicon) technological platform on which the NCP51150 is based has a number of benefits. In comparison to silicon-based devices, GaN technology provides larger power densities, better switching efficiency, and lower power losses.
As a consequence, the efficiency is increased, the form factor is reduced, and the system performance is improved. The NCP51150’s capacity to function at high voltage levels, notably up to 600V, is one of its important characteristics.
This qualifies it for uses like industrial and automotive systems that need the ability to handle high voltage. The NCP51150 may be utilized in harsh situations while delivering dependable performance because to its high voltage rating.
To guarantee a secure and dependable functioning, the NCP51150 integrates a number of protective measures. It has under-voltage lockout (UVLO) capability, overcurrent protection, overtemperature protection, and overcurrent protection.
These safeguards assist in preventing potentially harmful situations from harming the IC and the associated system, assuring long-term dependability and system life.
The NCP51150 is also made to simplify the overall system design and lower the cost of the bill of materials (BOM). It combines a high-voltage GaN FET (Field-Effect Transistor), gate driver, and protective circuitry into a single component.
This integration decreases the cost of the system as a whole, simplifies the PCB architecture, and eliminates the need for extra external components.
