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Last Updated: Apr 25, 2025 | Study Period:
Gallium Nitride (GaN) transistors, with their strong electric field and rapid electron mobility, offer advantages such as low resistance, high efficiency, and suitability for various applications, including power supplies, inverters, and high-frequency electronics. GaN's semiconductor properties, including a wider band-gap, enable superior performance, making it particularly effective in high-power scenarios but less suitable for low-power applications where silicon is more commonly used.
The global Gallium Nitride (GaN) transistor market had been experiencing substantial growth due to the increasing demand for high-frequency and high-power electronics. GaN transistors are known for their superior performance compared to traditional silicon-based transistors.
GaN transistors are widely used in various applications, including power electronics, radio-frequency (RF) amplifiers, and microwave devices. They find application in industries such as telecommunications, automotive, aerospace, and consumer electronics.
GaN transistors are valued for their high electron mobility, high breakdown voltage, and excellent thermal conductivity. These characteristics make them suitable for power amplification and switching applications.
GaN transistors are more efficient than traditional silicon transistors, making them essential for power conversion in devices like inverters, adapters, and electric vehicles. GaN transistors are crucial for RF amplifiers in the telecommunications sector. The ongoing expansion of 5G networks was driving demand for GaN transistors.
The aerospace and defense sectors utilize GaN transistors in radar and communication systems due to their high-frequency capabilities and durability.
The GaN transistor market was expected to continue growing as the demand for high-power and high-frequency electronic devices increased. However, the pace of growth would be influenced by factors such as cost reduction efforts and technological advancements.
S No | Company Name | Development |
1 | Gallium Semiconductor | New GaN Transistor Portfolio Introduced by Gallium Semiconductor. Gallium Semi is a wide range of GaN solutions for 5G infrastructure, aerospace and defence, public safety, and industrial, scientific, and medical (ISM) applications. Known good die of GaN devices with low thermal resistance and saturated output power ranging from 10W to 400W are among the key product highlights. |
2 | EPC | A 3.9m100V rad-hard GaN transistor called EPC7018 was introduced by EPC for use in space applications. The EPC7018 has a total dosage rating of more than 1 Mrad and SEE immunity for linear energy transmission of 85MeV/(mg/cm2). The EPC7018 is provided in chip-scale packaging, just as the commercial eGaN FET and IC family, together with the other members of the rad-hard family (EPC7014, EPC7007, and EPC7019). |
The Global GaN transistor market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
Infineon Technologies Launches New GaN Transistor Family for Automotive and Industrial Applications: Infineon Technologies has launched a new family of GaN transistors that are specifically designed for automotive and industrial applications. The new transistors offer higher power density, efficiency, and reliability than traditional silicon transistors.
Wolfspeed Launches New 650V GaN Transistor for Electric Vehicle Applications: Wolfspeed has launched a new 650V GaN transistor that is specifically designed for electric vehicle applications. The new transistor offers higher power density, efficiency, and reliability than traditional silicon transistors.
Qorvo Launches New GaN Transistor for 5G Infrastructure Applications: Qorvo has launched a new GaN transistor that is specifically designed for 5G infrastructure applications. The new transistor offers higher power density, efficiency, and reliability than traditional silicon transistors.
GaN Systems, a leader in GaN power semiconductors, has expanded its GaN transistor portfolio with the GS-065-018-2-L, offering improved performance and design flexibility for consumer, industrial, and data center applications.
This transistor enhances efficiency, thermal management, and power density with its industry-standard form size, making it ideal for consumer electronics, TVs, and server power supplies. Nexperia also introduces high-voltage GaN FET devices, simplifying application designs through their cascode configuration.
These advances cater to automotive, electric vehicle, and industrial power supply needs, emphasizing efficiency and cost-effectiveness. Wolfspeed, a Cree Company, presents a 28V, 30W GaN HEMT bare die at WAMICON, offering high performance, efficiency, and innovation for a wide range of RF and microwave applications, including military, aerospace, and telecom systems. Wolfspeed's GaN-on-SiC RF power transistors also meet NASA's stringent reliability criteria for satellite communications and radar systems.
S NO | Overview of Development | Development Detailing |
1 | For high-power and high-voltage applications that use hard switching, QPT and GaN Systems have signed a partnership to optimise the performance of gallium nitride (GaN) transistors and address design issues in the 100kHz to 20MHz frequency range. | The most notable increase in EV range is due to QPTâs superior ability to drive GaN. GaN transistors are capable of switching on and off at greater frequencies. Less time is spent in transition and less energy is squandered, hence the higher the switching speed, the better. |
GaN transistors have a faster on-to-off transition than silicon and silicon carbide (SiC) transistors, which takes only 1-2ns as opposed to 20â50ns.
However, in some high-voltage, high-power applications, getting maximum performance is difficult. It is asserted that QPTâs technology enables the GaN transistors to operate at their maximum speed of up to 20MHz with millisecond switching to give improved operational precision without RF interference problems or overheating.
Integrating and condensing the variable-frequency drive (VFD) that regulates the motor speed provides an additional boost. Because existing VFDs are large and heavy, they are almost often placed far from the motor itself.
Sl no | Topic |
1 | Market Segmentation |
2 | Scope |
3 | Research Methodology |
4 | Executive Summary |
5 | Potential Opportunities For Client |
6 | Average B-2-B Price Of GaN Transistors, By Product Type |
7 | Innovations in the GaN Transistor Industry, by OEMs |
8 | Popular products that use GaN Transistors |
9 | Advantages of GaN over Si, SiC and GaAs transistors |
10 | Use of Gallium Nitride Transistors, by Application |
11 | Minimized impact of Chip Shortage in the market |
12 | Recent Production Milestones |
13 | Gross Margin Of GaN Transistors, By Region |
14 | Significance of GaN in Lidar and Artificial Intelligence |
15 | Applications of GaN such as Wireless Power, Audio & Space |
16 | The rise of GaN in Consumer Electronics & EVs (OBCs, DC-DC converters & Traction Inverters) |
17 | Market Size, Dynamics And Forecast By Region, 2023-2030 |
18 | Market Size, Dynamics And Forecast By Voltage, 2023-2030 |
19 | Market Size, Dynamics And Forecast By Application, 2023-2030 |
20 | Market Size, Dynamics And Forecast By Device Type, 2023-2030 |
21 | Competitive Landscape |
22 | Market Share Of Major Players-2023 |
23 | Investments & Growth Strategies Of Major Companies |
24 | M&A Activity In Past 2 Years |
25 | Company Profiles |
26 | Unmet needs and opportunity for new suppliers |
27 | Conclusion |