Global GaN Wafer Market 2024-2030

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    • GaN wafers are widely used in power electronics, including applications such as power supplies, inverters, and RF devices. The increasing demand for power-efficient electronic systems has been a key driver for the GaN wafer market.
    • GaN wafers are used in the production of high-frequency and high-power RF devices, contributing to the development of advanced wireless communication systems, including 5G infrastructure. 
    • The automotive industry has shown a growing interest in GaN wafers for applications such as electric vehicles (EVs) and advanced driver-assistance systems (ADAS). GaN’s high electron mobility and thermal stability make it suitable for power electronics in vehicles.
    • GaN wafers are essential for the production of GaN-based LEDs (Light-Emitting Diodes). The market for GaN LEDs has been expanding, driven by applications in general lighting, automotive lighting, and displays.
    • GaN wafers offer advantages in high-frequency and high-power applications due to their superior material properties. This has led to their adoption in radar systems, satellite communication, and other high-frequency electronics.
    • Companies and research institutions are investing in the development and improvement of GaN technology, including the manufacturing processes for GaN wafers. This investment contributes to technological advancements and cost reductions.
    • While GaN technology offers several advantages, the cost of manufacturing GaN wafers has been a challenge. Efforts to address these cost concerns are crucial for wider adoption across various industries.
    • GaN wafers are part of the broader trend toward wide-band gap semiconductors. These semiconductors, including silicon carbide (SiC), are gaining attention for their ability to operate at higher temperatures and voltages compared to traditional silicon-based devices.
    • The market for GaN wafers is expanding globally, with a focus on regions such as North America, Asia-Pacific, and Europe. The growth is driven by the increasing demand for efficient and high-performance electronic component
    • GaN wafers hold potential in emerging technologies such as the Internet of Things (IoT), where power-efficient and high-performance devices are essential for connected applications.



    The global GaN wafer market is poised to witness significant growth in the coming years, driven by the increasing demand for GaN-based power devices and high-performance electronics. GaN, or gallium nitride, is a wide-bandgap semiconductor material that offers superior performance compared to silicon, especially in high-power and high-frequency applications.


    GaN wafers are the starting material for the fabrication of GaN devices, and the demand for these wafers is expected to be fueled by the growth of various industries, including power electronics, consumer electronics, and telecommunications.


    GaN power devices offer superior efficiency and power density compared to silicon-based devices, making them ideal for applications in power conversion, motor control, and grid management. The increasing electrification of vehicles, the growing adoption of renewable energy sources, and the demand for smaller and more efficient power electronics are all driving the demand for GaN power devices.


    The technology for manufacturing GaN wafers has been improving significantly in recent years, leading to larger and higher-quality wafers. This is enabling the production of more powerful and efficient GaN devices, further fueling the growth of the GaN wafer market.


    GaN-based devices are finding applications in a wide range of industries beyond power electronics, including consumer electronics, telecommunications, and aerospace. For instance, GaN devices are used in high-power amplifiers for mobile phones, high-frequency transistors for base stations, and high-efficiency lighting systems.



    The Global GaN Wafer market refers to the market for gallium nitride (GaN) wafers, which serve as the foundational material for manufacturing GaN-based devices. GaN, a wide-bandgap semiconductor, exhibits superior performance compared to silicon, particularly in high-power and high-frequency applications. GaN wafers act as the starting point for fabricating a variety of GaN devices, driving the growth of the market.


    The Gallium Nitride (GaN) substrate is a high-quality single-crystal substrate. It is made using the original HVPE method and wafer processing technology, both of which have been around for a long time.


    High crystalline content, excellent uniformity, and superior surface quality are the features. GaN substrates are utilised for LD applications (violet, blue and green). In the production of High Electron Mobility Transistors (HEMT), the use of GaN-on-Si wafers has increased in popularity. It, as well as the ternary compounds and related binaries InN and AlN.


    Examples include ultraviolet (UV) and green-wavelength light emitters. The crystal lattice of the substrates is extremely flat, there is no strain, and their dislocation density is two orders of magnitude lower than that of other technologies. A very high concentration of electrical carriers also emphasizes GaN’s perfect quality. These products are seen as enabling breakthroughs in high-power electronic and solid-state lighting due to their significant energy savings.



    The Global GaN Wafer market can be segmented based on wafer size, application, and region:

    Wafer Size:

    • 2-inch and 4-inch GaN wafers dominate the market currently, but the demand for larger wafers, such as 6-inch and 8-inch wafers, is expected to increase as GaN device technology advances.


    • Power electronics is projected to be the largest application segment, followed by consumer electronics and telecommunications.


    • Asia Pacific is anticipated to hold the largest market share due to the strong presence of GaN wafer manufacturers and device makers in the region. North America and Europe are expected to follow.



    GaN wafers are utilized to manufacture a wide range of GaN devices, including:

    • Power electronics devices: Transistors, switches, and rectifiers
    • High-frequency devices: Amplifiers and oscillators
    • Optoelectronic devices: LEDs and lasers



    GaN wafers offer several advantages over silicon wafers, such as:

    • Higher power density: GaN devices can operate at higher power densities compared to silicon devices.
    • Higher efficiency: GaN devices exhibit greater efficiency than silicon devices, converting more electrical power into useful output power.
    • Wider bandgap: GaN’s wider bandgap allows it to withstand higher voltages and operate at higher temperatures.
    • Improved thermal conductivity: GaN’s superior thermal conductivity enables it to dissipate heat more effectively.



    The Global GaN Wafer market faces certain challenges, including:

    • High cost: GaN wafers are generally more expensive than silicon wafers.
    • Technical complexity: Manufacturing GaN wafers involves a more complex process compared to silicon wafers.
    • Limited availability of large-diameter wafers: The availability of large-diameter GaN wafers is still limited.



    1. GaN wafers play a crucial role in the deployment of 5G networks, particularly in the development of high-frequency and high-power RF devices for 5G base stations and other infrastructure components.
    2. The automotive industry has been increasingly adopting GaN wafers for power electronics in electric vehicles. GaN’s high efficiency and power density make it suitable for use in inverters and other EV components.
    3. Advancements in GaN-on-silicon technology have been a notable trend, with ongoing efforts to improve the performance and reduce the cost of GaN wafers. Silicon substrates offer potential cost advantages compared to other materials. 
    4. GaN wafers are finding increased use in power supply applications, including adapters and chargers. The demand for high-efficiency power electronics in consumer electronics and industrial applications is driving this trend. 
    5. GaN wafers are being integrated into wireless charging systems, contributing to the development of efficient and compact wireless chargers for a range of applications, including smartphones and electric vehicles. 
    6. The defense and aerospace sectors have shown a growing interest in GaN wafers for applications such as radar systems and electronic warfare equipment. GaN’s high-power capabilities make it suitable for these demanding applications. 
    7. Some companies in the GaN wafer market are moving towards vertical integration, incorporating multiple stages of the supply chain. This includes companies involved in the production of GaN materials, devices, and systems.
    8. There is a trend toward the development of GaN-based power integrated circuits (ICs) for various applications. These ICs leverage the unique properties of GaN to deliver high performance and efficiency in power management. 
    9. Collaborations and partnerships between semiconductor manufacturers, technology companies, and research institutions have been observed, aiming to accelerate the development and adoption of GaN technology. 
    10. GaN wafers are finding applications in space-based systems due to their ability to operate in harsh environments. This trend reflects the interest in leveraging GaN’s performance characteristics for space applications.
    11. GaN wafers are crucial in the development of MicroLED displays, offering advantages such as high brightness and energy efficiency. The trend towards smaller, more efficient display technologies is driving the use of GaN wafers in this space.



    For more than 20 years, AIXTRON has led the way in the development of hardware and the GaN on Si technology. Thanks to In-Situ Cleaning and Cassette-to-Cassette automation, the company’s AIX G5+ C planetary reactor was the first completely automated GaN MOCVD system and is now recognized as the standard equipment for the GaN power industry. 


    The platform has revolutionary reactor inlets that improve material uniformity by a factor of two for the best device yields. It is packed in a new, compact configuration to make the most of the smallest cleanroom area. With Planetary batch reactor technology, the cluster can be outfitted with up to three process modules and produce a record capacity of 15×200 mm wafers, resulting in a 25% per-wafer cost reduction over earlier versions.


    The Innovative Materials Arena (IMA) will host the construction of the new facility. In Linköping, Sweden’s stergötland, an area noted for its forward-thinking materials businesses, there is a cluster for innovative materials called IMA.A maximum annual manufacturing capacity of 40,000 100 mm/150 mm epiwafers has been built into the plant. 


    S.NO Overview of Development Details of Development
    1. AIXTRON launches G10-GaN for Power Electronics market GaN-based power and radio frequency (RF) devices now have a new cluster solution from AIXTRON SE, the industry’s top producer of deposition equipment. At the SEMICON Taiwan in Taipei, the G10-GaN and all of its brand-new, cutting-edge features are now being showcased. The new platform delivers lowest overall cost per wafer, brand-new compact design, and best-in-class performance.
    2. European compound semiconductor manufacturer SweGaN launches project for new headquarters and state-of-the-art wafer production facility The world’s top IDMs/Foundries, Fabless, system manufacturers are served by SweGaN AB, which develops and produces custom-made GaN-on-SiC epitaxial wafers. SweGaN AB recently announced it is constructing a new headquarters in Linköping, Sweden, which will include a cutting-edge, high-capacity semiconductor production facility. 
    3. Navitas Confirms Continued Supply of Leading-Edge Gallium Nitride Power ICs The only pure-play, next-generation power semiconductor business, Navitas Semiconductor, has verified the ongoing availability of cutting-edge gallium nitride (GaN) power ICs. The export of elements like germanium and gallium would be subject to limitations, according to the Chinese Ministry of Commerce.
    4 NGK Insulators NGK successfully created a GaN wafer with almost no crystal flaws by applying its unique liquid-phase process designed to grow crystals from solution and drawing on its experience creating GaN wafers for high-brightness LEDs. 
    5 Mojo Vision Develops First 300mm GaN-on-Silicon The first-ever 300mm blue GaN-on-Silicon micro-LED array wafer was successfully lit up, marking a significant development and process milestone for Mojo Vision, a high-performance micro-LED manufacturer. This accomplishment represents a significant step forward in the maturation of micro-LED manufacture at cutting-edge 300 mm CMOS fabs.


    The ‘GaN-on-Si’ wafer technology used by Navitas. Given the numerous sources of gallium available worldwide, the wafer subcontract maker has confirmed that the export limitations have no impact on their output. Gallium has significant supplies all over the world because it is a by-product naturally produced during the manufacture of other metals like aluminum. Germanium is not used in any products by Navitas


    Technology for the mass manufacture of high-quality, large-diameter wafers is essential for the successful application of GaN wafers. In order to build the technology for the mass manufacture of high-quality, large-diameter GaN wafers for next-generation power semiconductor devices, they are making progress while resolving problems.


    They previously set records for the world’s smallest, densest dynamic display, including 14k pixels per inch (PPI), 20k PPI, and 28k PPI. This is their fourth global record for the display sector in five years.


    For applications in wearables, vehicles, consumer electronics, high-speed networking, and extended reality (XR), micro-LEDs offer important performance, efficiency, and form-factor advantages. To obtain GaN-on-Silicon wafers accepted into the 300mm facility, Mojo Vision overcame significant supply chain and wafer certification difficulties, including as wafer bow and contamination concerns.



    AIXTRON SE, the leading supplier of deposition equipment to the semiconductor industry, launches a new cluster solution for GaN based power and radio frequency (RF) devices. The G10-GaN and all its new innovative features are currently being presented at the SEMICON Taiwan (September 6-8, 2023) in Taipei. The new platform offers best-in-class performance, an all-new compact design, and overall lowest cost per wafer.


    Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has shipped more than 300 million pieces of its InnoGan gallium nitride chips as of August 2023, helping customers achieve small size, high energy efficiency, and low loss product design


    A cost-effective method for customers to share wafers in the production of gallium nitride (GaN) transistors was announced by a Singapore-based silicon manufacturer IGaN.


    According to IGaN, the Multi-Project Wafer shuttle program aims to encourage the production of wafers in large quantities. Clients will see lower costs by sharing the cost of photomasks and wafers they use with other transport program accomplices. Consequently, more partners will be able to develop gallium nitride devices with power efficiency conversion improvements.


    The industry is ripe for a transition to GaN devices with various infrastructures coming together, making it conducive to new technologies. The company anticipated that OF E-mode GaN transistors would become more widespread as a result of the new method.


    Inverters, onboard battery chargers, AC-DC power supplies, motor drives, and VHF small form factor power adapters that require highly efficient power conversion are expected to utilize these transistors more frequently. Numerous applications make use of transistors, including cell towers.



    The Global GaN wafer market can be segmented into the following categories for further analysis.

    GaN wafer Market By Wafer Size

    • 2-inch GaN Wafers
    • 4-inch GaN Wafers
    • 6-inch and 8-inch GaN Wafers


    GaN wafer Market By Application

    • Power Electronics
    • Consumer Electronics
    • Telecommunications
    • Automotive
    • Others


    GaN wafer Market By Geography

    • USA
    • Europe
    • China
    • Asia Ex China
    • Rest of the World



    Here is a list of some of the leading GaN Wafer companies in the world:

    • Qorvo, Inc. (US),
    • Wolfspeed, Inc. (US),
    • Sumitomo Electric Industries, Ltd. (Japan),
    • MACOM Technology Solutions Holdings, Inc.
    • Aixtron Ltd.



    1.     What are the current market trends driving the growth of GaN Wafer globally?
    2. Which industries are the primary consumers of GaN Wafer, and what applications are driving their adoption?
    3. What technological advancements have significantly impacted the GaN Wafer market in recent years?
    4. How are government regulations influencing the development and adoption of GaN Wafers worldwide?
    5. Which key companies are dominating the GaN Wafer market, and what are their major offerings?
    6. What are the primary challenges faced by the GaN Wafer industry, and how are they being addressed?
    7. How is the GaN Wafer market projected to grow in the next seven years, in terms of market size and revenue?
    8. The market size (both volume and value) of the Global GaN Wafer market in 2022-2030 and every year in between?
    9. What are the key geographical markets for GaN Wafer, and how do regional differences impact market dynamics?
    10. What is the average cost per Global GaN Wafer market right now and how will it change in the next 5-6 years?
    11. Average B-2-B Global GaN Wafer market price in all segments
    12. Latest trends in the Global GaN Wafer market, by every market segment
    13. How does GaN Wafer compare with other wafer types in terms of efficiency, cost-effectiveness, and applicability across various industries?
    14. What specific developments in research and development are driving innovation in GaN Wafer technology?
    15. What are the primary considerations when it comes to the safety and environmental impact of GaN Wafer, and how are these being managed or addressed by the industry?


     1. Scope Of the Report​  
    2.     Market Segmentation​
    3.     Research Methodology​
    4.     Executive Summary​
    5.     Key Predictions for GaN Wafer Market​
    6. Insight From Industry Stakeholders​
    7.     Global GaN Wafer - Overview ​
    8. Global GaN Wafer Manufacturer’s Footprint - 2023​
    9.     Average B-2-B Price Of GaN Wafer, by Region​
    10.  Recent Developments In GaN Wafer Market​
    11.  Major Drivers For GaN Wafer
    12.  Opportunities For GaN Wafer In Different Industries​
    13.  Industrial Supply Chain For GaN Wafer  
    14.  Increasing demand for GaN Wafer
    15.  Growing adoption of GaN Wafer in new applications​
    16.  Market Size, Dynamics And Forecast By Geography (2024-2030)​
    17.  Market Size, Dynamics And Forecast By wafer size (2024-2030)​
    18.  Market Size, Dynamics And Forecast By Application(2024-2030)​
    19.  Growth Strategies Of Major Players​
    20.  Competitive Landscape​
    21.  Recent Mergers And Acquisitions In Past 2 Years​
    22.  Market Share Of Industry Players - 2023​
    23.  Company Profiles​
    24.  Conclusion​
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