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A hybrid memory cube is made up of DRAM chips stacked vertically on top of one other. These stacked layers are linked through Through-Silicon Vias and are put above a logic layer (TSV). In the sectors of consumer electronics and high-performance computing, HMCs are employed.
By breaking past the memory wall, HMC provides huge increases in bandwidth and performance. HMC’s design is 70 percent more energy efficient per bit than existing DRAM technologies, making it tenfold more efficient than present memory systems.
Because of their increased bandwidth, which enhances networking systems’ capacity to match line speed performance, the ever-increasing demand for mobility and the growing influence of cloud services are likely to drive demand for HMC solutions.
The Global Hybrid Memory Cube (HMC) Market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2026, registering a CAGR of XX% from 2022 to 2027.
A 128GB DDR4 DIMM is introduced by Samsung. This is eight times the density of the most widely accessible DIMM and is comparable to the entire capacity of standard SSDs. Samsung employs TSV interconnects on the DRAMs to get all of the chips into the DIMM configuration.
Each of the 36 DRAM packages in the module has four 8GB (1GB) chips, totalling 144 DRAM chips in a typical DIMM style. The stack closely resembles either the High-Bandwidth Memory (HBM) or the Hybrid Memory Cube since each package includes a data buffer chip (HMC).
Because these 36 packages (or, worse, 144 DRAM chips) would overflow the processor’s address bus, the DIMM employs the RDIMM protocol, in which the address and control pins are delayed on the DIMM before reaching the DRAM chips,
therefore reducing the amount of data sent to the DRAM chips.
