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A low-power signal is changed into a higher-power one using an i band power amplifier (PA). Audio amplifiers, which are used to power speakers and headphones, and RF power amplifiers, which are utilized in the transmitter’s final stage, are two typical examples.
A power amplifier’s job is to increase the input signal’s power level. It must be able to handle a lot of current and deliver a lot of power. To handle greater currents, transistor bases are thickened.
The global i band power amplifier market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
MaxLinear Inc. and RFHIC announced a partnership to deliver a production-ready I band 400MHz Power Amplifier (PA) solution for 5G Macrocell radios, utilizing RFHIC’s most recent ID-400W series GaN RF Transistors in combination with MaxLinear MaxLIN Digital Predistortion (DPD) and Crest Factor Reduction (CFR) technologies.
Radio Access Network (RAN) product developers will be able to quickly produce ultra-wideband 400MHz Macro PAs for all global 5G mid-band deployments with low emissions and high power efficiency by combining RFHIC’s cutting-edge dual-reverse GaN RF transistor ID41411DR with MaxLIN DPD and making it accessible as a pre-verified solution.
Ultra-wideband linearized performance for 5G mid-band radio applications in the 3.4 to 4.1GHz region is provided by the ID-400W GaN RF transistor series. In comparison to rival products, RFHIC’s innovative FLY-Flange packaging (RF24008DKR3) considerably improves bandwidth support.
For instance, the ID41411DR transistor has outstanding wideband signal performance, a linearized ALCR of -49dBc, a saturated power of 400W, and an average power of 56W. When running at 3.9GHz, the ID41411DR also provides an unrivaled drain efficiency of 46%.
