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Last Updated: Apr 25, 2025 | Study Period: 2022-2030
A switching-mode, high-efficiency, ideal 100 percent device called an s-band power amplifier is used to amplify low frequency signals, most frequently audio frequency (AF) signals. For radio transmitters that use collector amplitude modulation, high-efficiency AF signal amplification is crucial.
A power amplifier's job is to increase the input signal's power level. It must be able to handle a lot of current and deliver a lot of power. To handle greater currents, transistor bases are thickened.
The global S - band power amplifier market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2022 to 2030.
Microchip has developed a new S-band power amplifier for use in aerospace and defense applications. S-band radar systems frequently strive to increase their Size, Weight, and Power (SWaP). For wireless radar systems using the S-band, the new Microchip 70W, ICP3049P, 2.7-3.5 GHz Power Amplifier (PA) provides the finest SWaP performance in the industry and the maximum efficiency.
When developing a new radar system or adding functionality to an existing platform, designers take numerous factors into account. When mobile radar systems (airborne, shipborne, or other mobile radar systems) are the desired use case, PCB area and integrated circuit component selection/integration quickly rise to the top of the list of priorities.
Separate PAs were frequently employed in earlier S-band radar system generations for the 2.7 to 3.1 GHz and 3.1 to 3.5 GHz bands. The same PA was frequently employed for each band;However, it was specifically matched/tuned to each band by shifting the response up or down in frequency using external components.
This method is no longer required with devices like the ICP3049P because the full band is covered by a single IC, saving board space by obviating the requirement for these extra components.Many difficult requirements are put on the PA as phased array antenna radar systems gain in favor.
The needs of the system must be carefully taken into account when formulating the requirements for a PA transmitter line-up utilized in a phased array radar system.
A 400W S-band power amplifier MMIC was introduced by Altum RF. By utilizing the Taoyuan City compound semiconductor wafer foundry WIN Semiconductors Corp.'s NP45-11 technology.The amplifier is suitable for S-band radar applications and operates between 2.8 and 3.3GHz with an output power of 400W and a power-added efficiency (PAE) of 50 to 55 percent.
High-electron-mobility transistors (HEMTs) made with gallium nitride on silicon carbide (GaN-on-SiC) in 0.45-micrometer (m) size can now be packaged in plastic thanks to WIN's NP 45-11 method, which has improved moisture protection.
Due to Altum RF's collaborative partnership with TNO, cutting-edge RF to millimetre-wave goods and technologies are reportedly produced for commercial markets and applications. Through this partnership, Altum RF is able to make use of some of TNO's distinctive technical capabilities.
They regard the industrialization of this ground-breaking S-band technology as a logical expansion of their product line, and they look forward to doing so. The strategic goal of Altum RF is to increase the range of their available products beyond X-band.
Based on more than 30 years of cutting-edge phased-array HPA[high-power amplifier] research, it is impressive to see the outstanding performance this S-band power amplifier can achieve using WIN Semiconductors' cutting-edge GaN technology, and they are equally excited about the ability to commercialise it with Altum RF.
With this powerful strategic alliance, they anticipate many more advancements in the future.Altum RF and TNO have a wealth of experience utilising WIN's compound semiconductor technologies to deliver performance that leads the market, and they are excited to be the RF GaN technology partner for this new product. In order to limit amplifier distortion and spectral regrowth, the amplifier has an adaptive nonlinear pre-corrector that effectively pre-distorts the input driving signal.
Input overdrive, output load VSWR, and temperature problems are all thoroughly safeguarded against in the amplifier. The HPA can be returned to its regular operational state after the fault condition has been resolved because all of the protection circuits are self-correcting.
| Sl no | Topic |
| 1 | Market Segmentation |
| 2 | Scope of the report |
| 3 | Abbreviations |
| 4 | Research Methodology |
| 5 | Executive Summary |
| 6 | Introduction |
| 7 | Insights from Industry stakeholders |
| 8 | Cost breakdown of Product by sub-components and average profit margin |
| 9 | Disruptive innovation in the Industry |
| 10 | Technology trends in the Industry |
| 11 | Consumer trends in the industry |
| 12 | Recent Production Milestones |
| 13 | Component Manufacturing in US, EU and China |
| 14 | COVID-19 impact on overall market |
| 15 | COVID-19 impact on Production of components |
| 16 | COVID-19 impact on Point of sale |
| 17 | Market Segmentation, Dynamics and Forecast by Geography, 2022-2030 |
| 18 | Market Segmentation, Dynamics and Forecast by Product Type, 2022-2030 |
| 19 | Market Segmentation, Dynamics and Forecast by Application, 2022-2030 |
| 20 | Market Segmentation, Dynamics and Forecast by End use, 2022-2030 |
| 21 | Product installation rate by OEM, 2022 |
| 22 | Incline/Decline in Average B-2-B selling price in past 5 years |
| 23 | Competition from substitute products |
| 24 | Gross margin and average profitability of suppliers |
| 25 | New product development in past 12 months |
| 26 | M&A in past 12 months |
| 27 | Growth strategy of leading players |
| 28 | Market share of vendors, 2022 |
| 29 | Company Profiles |
| 30 | Unmet needs and opportunity for new suppliers |
| 31 | Conclusion |
| 32 | Appendix |
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