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Last Updated: Apr 25, 2025 | Study Period: 2022-2027
Silicon carbide MOSFETs have no tail voltage, which means they operate quicker, have reduced power dissipation, and are therefore more stable.
SiC MOSFETs have swiftly surpassed traditional silicon technology as the preferred solution for most succeeding power electronics equipment and high optoelectronic devices.
Furthermore, the demand for SiC MOSFETs is being driven by several benefits of SiC-MOSFETs over typical silicon diodes, such as increased channel resistance, high switching performance, high temperature handling capabilities, and reduced switching loss.
S No | Overview of Development | Development Detailing | Region of Development | Possible Future Outcomes |
1 | Microchip Unveils Industry-Leading 3.3 kV Silicon Carbide (SiC) Power Devices Enabling New Levels of Efficiency and Reliability | Designers have more alternatives for greater power semiconductors using 3.3 kV SiC MOSFETs as well as Schottky Barrier Diodes (SBDs). | Global | This would enhance better Technological Controls |
2 | STMicroelectronics Drives the Future of EVs and Industrial Applications with New Silicon-Carbide Devices | For e-mobility and energy-efficient industries, ST's latest-generation silicon-carbide (SiC) power devices extend leadership in performance and reliability. | Global | This would enhance better Technological Controls |
3 | New Generation of SiC MOSFETs Geared Toward xEVs and Industrial Applications | In terms of electrical breakdowns, energy band gap, electron saturation magnetization, and thermal transfer, SiC surpasses silicon in electrical applications. | Global | This would enhance better Technological Controls |
4 | ON Semiconductor announces new full silicon carbide MOSFET module solutions for charging electric vehicles | For higher discharge solutions, a broad selection of wide bandgap devices is available. | Global | This would enhance better Technological Controls |
5 | TT Electronics has launched a Silicon Carbide (SiC) power MOSFET for environmentally challenged applications | It has developed a Silicon Carbide (SiC) power MOSFET for high-temperature, high-power-efficiency applications. | Global | This would enhance better Technological Controls |
Global SiC MOSFET Module Market is expected to gain market growth in the forecast period of 2020 to 2027. It is analyzed that the market is growing with a CAGR of XX.X% in the forecast period of 2020 to 2027 and is expected to reach USD XXXX million by 2027.
Due to its important benefits over ordinary silicon diodes, SiC MOSFETs have attracted a lot of attention in recent years. Another of the primary reasons factor contributing to the growth of the SiC MOSFETs market is the rising demand for SiC MOSFETs to increase the
effectiveness of different semiconductors and electronic equipment. SiC MOSFETs are also attractive electrical switching for creative power supply and motor drive solutions, and they're employed in a variety of power industries.
Infineon Technologies is a leading mobiliser of the SiC MOFSET integration technology in the market. The CoolSiC MOSFET technology will allow for completely new product designs. The Silicon Carbide (SiC) Power MOSFET has a number of benefits over standard Silicon-based
switching including IGBTs and MOSFETs. Photovoltaic inverters, traction battery, power storage, adjustable speed drives, UPS, auxiliary power supply, and SMPS all use CoolSiC MOSFETs in 1700 V, 1200 V, and 650 V.
Wolfspeed Inc. is part of the component manufacture trending companies in the current industry. The Wolfspeed Silicon Carbide (SiC) MOSFETs allow for greater switching frequencies while also shrinking the number of inductances, capacitors, filters, as well as converters.
With greater blocking pressures and avalanche capabilities, our Silicon Carbide MOSFETs replace silicon devices, resulting in lower reduced switching inefficiencies. The introduction of 3rd-Generation 650V MOSFETs is the most recent development, allowing for thinner, lightweight, and more efficient energy conversions in an even wider variety of power solutions.
Sl no | Topic |
1 | Market Segmentation |
2 | Scope of the report |
3 | Abbreviations |
4 | Research Methodology |
5 | Executive Summary |
6 | Introduction |
7 | Insights from Industry stakeholders |
8 | Cost breakdown of Product by sub-components and average profit margin |
9 | Disruptive innovation in the Industry |
10 | Technology trends in the Industry |
11 | Consumer trends in the industry |
12 | Recent Production Milestones |
13 | Component Manufacturing in US, EU and China |
14 | COVID-19 impact on overall market |
15 | COVID-19 impact on Production of components |
16 | COVID-19 impact on Point of sale |
17 | Market Segmentation, Dynamics and Forecast by Geography, 2022-2027 |
18 | Market Segmentation, Dynamics and Forecast by Product Type, 2022-2027 |
19 | Market Segmentation, Dynamics and Forecast by Application, 2022-2027 |
20 | Market Segmentation, Dynamics and Forecast by End use, 2022-2027 |
21 | Product installation rate by OEM, 2022 |
22 | Incline/Decline in Average B-2-B selling price in past 5 years |
23 | Competition from substitute products |
24 | Gross margin and average profitability of suppliers |
25 | New product development in past 12 months |
26 | M&A in past 12 months |
27 | Growth strategy of leading players |
28 | Market share of vendors, 2022 |
29 | Company Profiles |
30 | Unmet needs and opportunity for new suppliers |
31 | Conclusion |
32 | Appendix |