By submitting this form, you are agreeing to the Terms of Use and Privacy Policy.
Published Date - October 2024 Number of Pages - 117
For optical and wireless networking, satellite communications, and communications infrastructure, high-performance silicon-germanium (SiGe) bipolar CMOS (BiCMOS) technologies are specifically tuned for either power amplifier applications or very high-frequency applications.
Customers may maximize performance, integrate substantial digital and RF capabilities, and take advantage of an affordable silicon technology base with the help of silicon-proven SiGe solutions. The SiGe technology platforms take full benefit of being integrated with traditional silicon CMOS while being performance-competitive with more expensive compound semiconductor technologies (Si CMOS).
Highest fmax SiGe BiCMOS foundry process at 400GHz with a roadmap to 1THz SiGe PA that has been successfully used in WiFi PAs for more than ten years and has shipped billions of components. Two of the electronics industry’s groundbreaking innovations are CMOS and Bipolar. CMOS-produced components are physically smaller, dissipate less power, and have reduced noise margins. On the other hand, devices created using bipolar technology run faster, switch more quickly, and perform well in terms of noise.
Scientists have combined the two to produce the BiCMOS technology, which combines the benefits of both methods. For instance, compared to CMOS, BiCMOS offers faster speeds and lower power dissipation than bipolar. However, the cost is increased and the consequence is extra process complexity. Impurity optimization is required for both CMOS and bipolar concerns.
The Global SiGe BiCMOS sensor market accounted for $0.5 Billion in 2023 and is anticipated to reach $1.6 Billion by 2030, registering a CAGR of 16.4% from 2024 to 2030.
A 0.18-m SiGe BiCMOS platform (SBC18) from Jazz Semiconductor (Newport Beach, CA) has been released. It will allow users to produce green, energy-efficient analogue ICs by providing power and efficiency reductions over regular CMOS. The SBC18 is intended for low-power, integrated wireless and networking solutions that demand high-density logic, high-performance bipolar transistors, and high-quality passives.
For analogue circuits using CML, Jazz’s SiGe NPN offers up to 30% power savings over traditional CMOS.For applications requiring low noise, high switching speeds, and greater linearity than can be obtained with a normal 0.18-m CMOS offering, the modular SBC18 SiGe BiCMOS platform contains high-speed, standard, and high breakdown SiGe bipolar transistors, or SiGe NPNs.
SiGe NPN offers up to 30% more power savings than regular CMOS for current-mode logic high-speed precision analogue circuits (CML). Additionally, SBC18 supports SiGe devices up to 200 GHz, extending this power benefit to higher-frequency uses like car radar.A Vertical PNP (VPNP) module for the SBC18 SiGe BiCMOS process is also available. When combined with a SiGe NPN, this module enables the construction of analogue circuits with high voltage requirements, complementary drives, or amplification requirements that are greater than those of ordinary CMOS.
SiGe BiCMOS PLL from Infineon is an RF benchmark in terms of fast speed, low power, and integration at 10 GHz, according to Infineon. When compared to traditional silicon BiCMOS circuits, the PLL offers better RF performance at operating frequencies typical for mobile phones while consuming 50% less supply current. The B7HFc technology now enables the realisation of highly integrated low-power RF transceivers, resulting in portable applications with increased talk and standby times.
The SiGe BiCMOS technology offers a perfect foundation for next wireless internet and mobile communication standards like 2.5G, 3G, and HiperLAN because it specifically addresses the needs of greater operating frequencies, lower power consumption, and increased degrees of integration. The requirements of mobile communication systems and high-speed data transmission standards were the focus of the design of the B7HFc technology. Modern 0.35-micron analogue CMOS technology and cutting-edge RF bipolar transistors with transit frequencies up to 75 GHz are combined in this technique. Innovative solutions for analogue, mixed-signal, and high-level integrated RF products, such as low-noise amplifiers (with minimum noise figures of 0.65 dB at 1.8 GHz), mixers, PLLs (up to 10 GHz), transceivers, and analog-to-digital converters, will be made possible by the new SiGe BiCMOS process.
A significant industry-academic partnership, including the development of cutting-edge SiGe BiCMOS technology, has been disclosed by X-FAB Silicon Foundries and the Leibniz Institute for High Performance Microelectronics (IHP). In order to achieve mutually advantageous technical synergies, the collaboration combines the expertise of X-FAB in semiconductor manufacturing with that of IHP in wireless communication.
Optoelectronics, 5G wireless communication systems, as well as cutting-edge radar applications, will all benefit from the technologies created by IHP and X-FAB. High-performance passive components like inductors and transformers will be directly integrated with IHP’s active devices in the backend of line (BEOL) of X-FAB’s 130 nm XR013 RF-SOI process with Cu and thick-Cu metallization. This integration will allow for the testing of a wide range of concepts for next-generation wireless systems.
The development of cutting-edge SiGe BiCMOS technology is a primary area of concentration for the partnership. The SiGe heterojunction bipolar transistors from IHP will serve as the basis for this. Strong performance parameters are offered by them, with fT/fmax values of up to 250/340 GHz for SG13S-Cu and up to 300/500 GHz for SG13G2-Cu.
The 3 m thick low-loss copper interconnects used are certain to prove useful in assisting with the improvement of RF performance levels. Because it makes high-performance RF integration on a silicon-based platform possible, SiGe BiCMOS continues to be a promising option for a variety of wireless applications, including 5G. The enormous potential here is acknowledged by both IHP and X-FAB.
The technologies they are developing are the result of a synergistic partnership that taps into each partner’s unique skills. Through this relationship, they are able to translate world-class research into practical applications, setting the foundation for the next generation of high performance RF systems, including sub-THz imaging, 60-300 GHz radars, and 400G data connectivity.
IHP conducts research and development on technologies such as novel materials, silicon-based systems, and ultrahigh frequency circuits. Additionally, it creates solutions for industries like industry 4.0, aerospace, automotive, wireless and broadband communication, security, and medical technology.
It runs a pilot line for scientific advancements and the creation of high-speed circuits using 0.13/0.25 m BiCMOS technology, employing about 350 people, and is housed in a 1500 m2 DIN EN facility.
