SILICON CARBIDE POWER MODULES MARKET

INTRODUCTION

SiC was originally identified in meteorites dating back more than 4.6 billion years, making it older than our solar system. But it hasn't been until recently that SiC has reached a level of industrialization that makes it both technically and commercially feasible for it to compete with silicon in the manufacture of power semiconductors.

Combining silicon (Si) and carbon (C), silicon carbide has distinct electrical properties that make it possible to create high-performance semiconductors for a variety of applications.

A power module that employs silicon carbide semiconductors as switches is known as a silicon carbide power module.Electrical power, which is the result of current and voltage, is transformed with high conversion efficiency using a silicon carbide power module.

When utilized in MOSFETs, silicon carbide, a semiconductor with a wide band-gap and very low switching losses, enables higher switching frequencies compared to conventional silicon devices. In contrast to conventional Si semiconductors, it can work at higher temperatures and at higher voltages.

Due to SiC power semiconductors' essential efficiency properties, which enable cost savings while simultaneously boosting system performance in a number of applications such as EV chargers, solar inverters, e-mobility, and motor drives, it is anticipated that their use would increase dramatically.

SILICON CARBIDE POWER MODULES MARKET SIZE AND FORECAST

The Global Silicon Carbide Power Modules market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.

SILICON CARBIDE POWER MODULES MARKETNEW PRODUCT LAUNCH

The advantages of tried-and-true industry standard power modules are combined with SEMIKRON packaging technology in SEMIKRON's hybrid SiC and SiC MOSFET power modules. All of silicon carbide's advantages can be fully utilized because of numerous packaging improvements.

SiC MOSFETs can switch at maximum speed thanks to a low module commutation inductance. Smaller magnetic filter components can be produced by converting the greater switching speeds into higher switching frequencies. The switching losses can be decreased at the same time, improving system effectiveness.

Higher power densities are made possible by sophisticated materials and packaging techniques that reduce the thermal resistance of the chip to the heatsink. Modules for silicon carbide power Applications for solar inverters use three-level topologies for the maximum efficiency, including ANPC and flying capacitor boosters.

Energy storage systems: 2- and 3-level topologies with highest efficiency and minimal noise,high-performance double conversion systems (UPS),Active front end and motor inverter with hybrid, SiC MOSFET sixpacks, and half-bridges are examples of motor drives.Power sources: extra power for induction heating, traction applications, etc.

New Silicon-Carbide Power Modules for Traction Applications in Electric Vehicles are Launched by STMicroelectronics. For usage in the E-GMP electric vehicle platform, which is shared by the KIA EV6 and a number of other models, Hyundai has chosen the five new SiC-MOSFET based power modules.

The development of traction applications for electric vehicles is the main focus of the new modules' design. The modules are available as part of ST's ACEPACK DRIVE package and are perfect for EV drives. The primary power semiconductors are ST's third-generation (Gen3) STPOWER SiC MOSFETs, which provide synchronous rectification, low switching energy, (RDS(ON) x die area), and low switching resistance.

These semiconductors are located inside the solution.Future generations of EVs will be built using ST silicon carbide solutions, which allow major automakers to set the pace for electrification.

Their third-generation SiC technology ensures the greatest power density and energy efficiency, resulting in superior vehicle performance, range, and charge time. Longer range is made possible by their traction inverters' use of SiC-MOSFET-based power modules from ST.

Utilising ST's ongoing technological investment to position itself as the leading semiconductor player in the electrification revolution, the collaboration between these two firms has realised a key step towards more environmentally friendly electric vehicles.

Faster charging, improved vehicle dynamics, and more energy efficiency are all made possible by ST's STPOWER SiC devices, which are created as compact SiC devices that can tolerate greater operating voltages. 

The modules use the thermally efficient and mechanically robust active metal brazed (AMB) substrate technology, installing a separate NTC for each substrate. Additionally, they come with an option of welded or screw-fit busbar, providing flexibility to meet various mounting needs.

The use of a Hall sensor to monitor the motor current is made possible by a long-busbar option, which increases versatility even further. Additionally serving as a partner to Renault is STMicroelectronics. A strategic alliance has been formed between the two parties.

The collaboration aims to enhance the performance of the electric and hybrid vehicles produced by the Renault Group that use wide bandgap semiconductor technologies from STMicroelectronics. Under the motto "Wide Bandgap," the chip manufacturer is promoting the release of components made of cutting-edge materials like gallium nitride or silicon carbide.

KEY PLAYERS IN SILICON CARBIDE POWER MODULES MARKET

• Cree Inc.
• Fuji Electric Co. Ltd 
• Infineon Technologies AG 
• Littelfuse Inc.
• ROHM Co. Ltd.,

THIS REPORT WILL ANSWER FOLLOWING QUESTIONS OFSILICON CARBIDE POWER MODULES MARKET

1. What is the average cost per Global Silicon Carbide Power Modules market right now and how will it change in the next 5-6 years?
2. Average cost to set up a Global Silicon Carbide Power Modules market in the US, Europe and China?
3. How many Global Silicon Carbide Power Modules markets are manufactured per annum globally? Who are the sub-component suppliers in different regions?
4. What is happening in the overall public, globally?
5. Cost breakup of a Global Silicon Carbide Power Modules market and key vendor selection criteria
6. Where is the Global Silicon Carbide Power Modules market  manufactured? What is the average margin per equipment?
7. Market share of Global Silicon Carbide Power Modules market manufacturers and their upcoming products
8. The most important planned Global Silicon Carbide Power Modules market in next 2 years
9. Details on network of major Global Silicon Carbide Power Modules market and pricing plans
10. Cost advantage for OEMs who manufacture Global Silicon Carbide Power Modules market in-house
11. 5 key predictions for next 5 years in Global Silicon Carbide Power Modules market
12. Average B-2-B Global Silicon Carbide Power Modules market price in all segments
13. Latest trends in Global Silicon Carbide Power Modules market, by every market segment
14. The market size (both volume and value) of Global Silicon Carbide Power Modules market in 2024-2030 and every year in between?
15. Global production breakup of Global Silicon Carbide Power Modules market, by suppliers and their OEM relationship