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High-performance Silicon Germanium (SiGe) is a semiconductor material that combines silicon and germanium to enhance the performance of electronic devices, particularly in the field of integrated circuits and radiofrequency applications.
SiGe alloys are widely used to improve the performance of transistors and other semiconductor components, allowing for faster processing speeds, reduced power consumption, and improved signal processing capabilities.
For instance, in the telecommunications industry, SiGe technology has been instrumental in the development of high-frequency amplifiers, low-noise amplifiers, and phase-locked loops. These advancements have made it possible for our smartphones to handle multiple communication standards like 4G and 5G more efficiently.
SiGe’s ability to offer high electron mobility, combined with its compatibility with standard silicon processing, has been a game-changer in the world of integrated circuits.
The Global High-performance silicon germanium market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
During conversion operations, some of the energy consumed in transportation and industry is lost as heat, frequently at high temperatures.
Thermoelectricity is an alternative to the waste-heat-recovery technology now in use, such as turbines and other forms of thermodynamic cycling, and it allows for the direct conversion of heat into electricity.
In recent decades, thermoelectric (TE) materials’ and modules’ performance has steadily increased. High-performance silicon germanium alloys rank among the best TE materials described in the literature in the high-temperature range (T hot side > 500°C).
These products are made from non-toxic ingredients.The peak thermoelectric figure of merit for phosphorus-doped n-type SiGe was ZT = 1.0 at 700°C, whereas the peak for boron-doped p-type SiGe was ZT = 0.75 at the same temperature. As a result, cutting-edge conversion efficiency was achieved along with a larger production throughput capacity than for rival techniques.
Electrical resistance of batches of ten pellets of both types had a standard deviation of 4%, which is suggestive of great repeatability. The TE elements were brazed together into modules using a silver-paste-based brazing process. With this construction method, electrical contact resistance was low and predictable (3 n m2).
Thirty 20 mm 20 mm TE modules were made and put to the test on a test bench that was designed to measure the performance of THE modules at high temperatures (up to 600°C).
Thirty TE modules were electronically connected and clamped together to form an air-water heat exchanger. On a hot-air test bench, the TEG was put through a vacuum test. A 16 g/s air flow at 750°C was used to test the output power, which was 45 W. Under these circumstances, the TE module’s heated surface reached 550°C.
Unlike commercial modules based on bismuth telluride, which are only capable of withstanding temperatures up to 400°C,High-performance silicon germanium TE modules can withstand such temperatures.
