By submitting this form, you are agreeing to the Terms of Use and Privacy Policy.
An example of a power semiconductor device that makes use of silicon carbide as the semiconductor material is a high-voltage Silicon Carbide (SiC) MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). Due to the special characteristics of silicon carbide, SiC MOSFETs are made to handle high voltage and high power applications.
The essential elements and characteristics of a high-voltage SiC MOSFET are broken down as follows:
SiC, or silicon carbide Wide-bandgap semiconductor SiC has a number of benefits over conventional silicon-based power devices. Because of its stronger thermal conductivity, higher breakdown voltage, and quicker switching speed, it has a higher power density and greater efficiency.
MOSFET Design: The source, gate, and drain are the three terminals of a SiC MOSFET. By adding a voltage to the gate terminal, which regulates the current flow between the source and drain terminals, the conducting channel is created.
Structure of Metal Oxide Semiconductors (MOS): A layer of silicon dioxide (SiO2) serves as the insulating layer (oxide) in SiC MOSFETs, keeping the gate electrode apart from the SiC semiconductor material. The device’s switching can be voltage-controlled thanks to the MOS structure.
SiC MOSFETs are specifically made to be able to withstand high voltage levels, which typically range from a few hundred volts to a few thousand volts. This qualifies them for high voltage switching applications such electric vehicle charging stations, motor drives, renewable energy systems, and power converters.
Low On-Resistance: Due to the inherent characteristics of silicon carbide, SiC MOSFETs have a low on-resistance (Rds(on)). Effective power conversion is made possible by the low on-resistance, which also lowers power losses.
Rapid Switching: SiC MOSFETs feature a rapid switching speed, which lowers switching losses and boosts efficiency. Higher switching frequencies and smaller passive components are made possible by the quick switching speeds in power electronic systems.
SiC MOSFETs are capable of operating at higher temperatures than silicon-based electronics. SiC’s higher thermal conductivity enables effective heat dissipation, enabling dependable operation in hot settings without noticeably degrading performance.
SiC MOSFETs frequently include integrated protection features like heat, overcurrent, and overvoltage protection as well as other integration and integration capabilities. The gadgets’ dependability and safety are improved by these features.
In conclusion, a high-voltage Silicon Carbide MOSFET is a power semiconductor device that takes advantage of silicon carbide’s special features to handle high voltages, offer low on-resistance, and enable quick switching rates.
These components can be used in a variety of high-power applications where high efficiency, high voltage capabilities, and high temperature operation are essential.
The Global High-Voltage Silicon Carbide MOSFET Market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
Toshiba releases its third-generation SiC MOSFETs, which help industrial equipment run more efficiently. The “TWxxNxxxC series,” a new line of power transistors from Toshiba’s third generation of silicon carbide (SiC) MOSFETs, has low on-resistance and dramatically decreased switching loss. Ten goods, five of which are 1200V and five of which are 650V, have begun shipping.
The new products reduced on-resistance per unit area by 43%, which enables a reduction of around 80% in the drain-source on-resistance gate-drain charge *(RDS(ON)*Qgd, a crucial index that illustrates the connection between conduction loss and switching loss.
On-resistance and switching loss are both decreased by roughly 20% as a result. The new goods increase the effectiveness of the machinery.
