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INTRODUCTION
Using polarisation and strain engineering, InGaN micro-light-emitting diodes monolithically grown on Si can operate at extremely stable temperatures. Micro-LED is a display technology that is based on tiny (thus, micro) LED devices that are utilised to directly synthesise colour pixels. It is sometimes referred to as mLED or LED.
In order to compete with the present top-tier OLED displays, micro-LED displays have the ability to produce extremely effective and attractive flexible displays. Similar to OLED, a MicroLED panel has incredibly tiny individual pixels that can produce both colour and light.
It does not, however, use organically generated pixels like an OLED panel does. Because of its tiny, micrometre-sized pixels, the device is known as a microLED panel.
The Global InGaN micro-LED market accounted for $XX Billion in 2022 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2023 to 2030.
NEW PRODUCT LAUNCH
First native red InGaN LED epiwafer for micro-LEDs is released by Porotech. Porotech, a spin-off from the University of Cambridge’s Cambridge Institute for Gallium Nitride, has announced the release of its first product, which is thought to be the first commercially available native red indium gallium nitride (InGaN) LED epiwafer for micro-LED applications.
Due to its optimal brightness, efficiency, and image definition, as well as improved longevity, micro-LED display technology offers a significant advance over conventional display panels. For near-to-eye applications like augmented reality (AR) and head-mounted displays, these advantages are essential.
They are also essential for a number of other applications, including TVs and large-area displays, wearable technology like smartwatches, mobile phones, and other wearables. Achieving the required high-efficiency, ultra-fine-pitch red pixels, however, has been difficult up to this point.
According to Porotech, its special production method has made it possible to develop a new class of porous GaN semiconductor materials and architectures that offer improved functionality.
The semiconductor combination of solid GaN and air known as porous GaN could be thought of as such. It gives Porotech the ability to tailor a wide range of material properties (optical, mechanical, thermal, and electrical) and as a result presents an altogether new material platform on which semiconductor devices can be constructed.
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