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The first variant of the new family is the highly integrated and configurable three-phase power module. It can be customized using silicon carbide or silicon, reducing the size and weight of the power solution for electric aircraft.
Manufacturers of More Electric Aircraft (MEA) are looking to switch flight control systems from hydraulic to electric to reduce weight and simplify design. Microchip Technology Inc.
has introduced a new comprehensive hybrid power drive module, the first variant in the new product line of power devices that will be available in 12 different variants with either silicon carbide (SiC) MOSFETs or insulated-gate bipolar transistors (IGBTs), to meet the requirements for an integrated and configurable power solution for aviation applications.
The highly integrated power semiconductor devices that make up these hybrid power drive modules reduce the number of components and make the design of the entire system simpler. The three-bridge topology of the configurable power devices is made possible by SiC or Si semiconductor technologies. These high-reliability power devices aid in reducing the size and weight of MEAs by having a slim design and a low profile.
The Global MEA Hybrid Power Drive Module market accounted for $XX Billion in 2022 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2023 to 2030.
A new comprehensive hybrid power drive module from Microchip has been unveiled. The first variant of the new family is the highly integrated and configurable three-phase power module, which can be customized using silicon carbide or silicon to reduce power solution size and weight for electric aircraft.
In order to reduce weight and simplify design, aircraft manufacturers working on More Electric Aircraft (MEA) are attempting to switch flight control systems from hydraulic to electric.
Microchip Technology Inc. today announced a new comprehensive hybrid power drive module to meet the requirements for an integrated and configurable power solution for aviation applications. This is the first variant in the new product line of power devices that will be available in 12 different variants with either insulated-gate bipolar transistors (IGBTs) or silicon carbide (SiC) MOSFETs.
