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A high-speed planar PIN microwave packaged photodiode is incorporated into a packaged photodiode to create a highly dependable, high-power photodiode component. For receiver applications involving optical preamplification, this package is ideal. Since the diode is well matched across the microwave frequency band, high-speed integration is made easier.
High-power capability and highly dependable planar photodiode technology, Bandwidth up to 22 GHz, high breakdown voltage, and 12 dB typical RF matching, sealed hermetically, Planar photodiode technology with high dependability, High-power potential.
While the photodiode junction is being illuminated by photons (light), energy is delivered to it. Minority carriers are injected, which causes the generation of hole and electron pairs.
It generates current that is inversely proportional to the amount of light that “is put” on the photodiode (photoelectric effect). The saturation current (dark current) and current dependent on illumination intensity make up the total current that passes through the junction.
While the photodiode junction is being illuminated by photons (light), energy is delivered to it. Minority carriers are injected, which causes the generation of hole and electron pairs. It generates current that is inversely proportional to the amount of light that “is put” on the photodiode (photoelectric effect).
Global microwave packaged photodiode market accounted for $XX Billion in 2022 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2023 to 2030.
The new high power, highly linear microwave photodetector from Albis Optoelectronics, a Swiss company that designs, develops, and manufactures high-speed InP and GaAs photodiodes, is intended for direct optical-to-electrical conversion of RF-modulated optical signals at 20 GHz.
The detector is suitable for installation in systems operated under harsh environmental conditions thanks to the small, tough, and hermetic PQW package. This module’s photodiode is an Albis photodiode chip with high power and high linearity that can operate over a broad spectrum of wavelengths, from 1260 to 1620 nm. You can also buy this photodiode mounted on an AlN carrier.
It provides photocurrents up to 50 mA with a typical bandwidth of 22 GHz, responsivity of 0.5 A/W, and high linearity of +30 dBm OIP3 @ 20 GHz, 30 mA. Radio-over-fibre, microwave photonics, and analogue optical links are examples of typical applications.
