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A new range of nanofabrication techniques called nanoimprinting lithography (NIL) can duplicate nanostructures from original master surfaces. Here, we use a dissolvable template to create extremely scalable, straightforward, and nondestructive. The fabrication of devices for electrical, optical, photonic, and biological applications has been accomplished using nanoimprint lithography.
NIL has been utilised to create MOSFET, O-TFT, and single electron memories for electronic devices. To transfer a geometric design from a pre-made photomask to a photoresist layer, which is placed on a thin film material or the majority of the substrate, nanolithography uses light, charged ions, or electron beams.
Lithography is distinctive because it resembles painting more closely than other printing techniques, which necessitate etching and other types of techniques.
Both semiconductor applications, where a step-and-repeat method is necessary, and big area imprinting, where throughput necessitates a process using a single-imprint step to pattern the entire substrate, have successfully used this inkjetting approach. Jet and flash imprint lithography is the new name for the process because both applications use inkjetting to deposit the resist (J-FIL).
Global Nanoimprint lithography template market accounted for $XX Billion in 2022 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2023 to 2030.
SPIE has introduced a single digit nanometer Nanoimprint template .A possible method to fabricate sub-10 nm devices with excellent resolution and low cost is to combine recently introduced helium ion beam lithography with nanoimprint lithography.
More functionality can be integrated into a device by shrinking the size of the transistors on the chip, and advancements in micro/nanolithography have made Moore’s law, an exponential growth process that has governed the semiconductor industry for more than 40 years, conceivable.
However, continuing in this direction calls for integrated circuits at sub-10 nm sizes within the next ten years. The master template, which typically contains the high-resolution nanostructures made by electron beam lithography, is what gives NIL its power (EBL).
However, in a sub-10nm regime, traditional EBL experiences a strong proximity effect, or the adverse impact of a neighbouring nanostructure on nanopatterning, making it difficult to pattern arbitrary dense structures over a sizable region.
Other factors that impede further EBL resolution improvement include the resist development procedure, spot size (which is constrained by electron diffraction and system aberrations), and secondary electron broadening, which is the enlargement of the primary beam by electrons generated in the resist material.
