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Nitrogen trifluoride is an inorganic gas that has a faint musty smell and is colourless, nonflammable, and poisonous. It is increasingly used in the production of LEDs, photovoltaics, flat-panel displays, and other microelectronics.
The greenhouse gas nitrogen trifluoride is likewise very potent and long-lasting. In the manufacture of microelectronics, key dielectric materials include polyimide and polyphenylquinoxaline.
If these polymers were more resistant to moisture, they could be employed even more widely. Using plasma processing techniques, polyimide and polyphenylquinoxaline films’ moisture resistance may be increased.
Fluorine is added to the surface of the polymers by exposing films to plasmas of nitrogen trifluoride. X-ray photoelectron spectroscopy and Fourier-transform infrared absorption spectroscopy are used to monitor fluorination.
Measurements of the water contact angle are used to evaluate how hydrophobic the treated surfaces are. When exposed to plasma, the polyimide and polyphenylquinoxaline film surfaces fluorinate fast, increasing the moisture resistance as a result.
The Global NF3 plasma technology market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
Insights on scaling sustained remote plasma generators in NF3 mixes. For low damage material processing during semiconductor manufacture, remote plasma sources (RPSs) are currently being developed.
F atoms are frequently obtained from plasmas maintained in NF3. Additional chances to create and manage desirable reactive species like F and NO are offered by NF3-containing gas mixtures like NF3/O2 and NF3/H2.
Using zero-dimensional global and two-dimensional reactor scale models, the findings of computational studies of RPS sustained in capacitively connected plasmas are addressed in this work.
Using electron impact cross sections for NF2 and NF computed by ab initio molecular R-matrix methods, a thorough reaction mechanism for plasmas sustained in Ar/NF3/O2 was constructed.
Results from the simulations were compared with measurements of radical densities made using optical emission spectroscopy to validate the reaction process.
The main sources of F radicals are dissociative attachment and dissociative stimulation of NFx.
The primary mechanism for heating gases in these Franck-Condon dissociative reactions is exothermicity, which results in excessive gas temperatures.
A wider range of end products is made possible by the feedstock gases’ high fractional dissociation.
When NFx and species containing O atoms react, endothermic reactions that are aided by the gas heating result in the synthesis of NO and N2O, which are then followed by exothermic reactions that result in the formation of NO2 and FNO.
