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Logic level, N-channel, enhancement mode, field-effect power transistor This device is perfect for applications requiring two sources of battery power and high-speed digital interface because of its exceptionally low 1 gate threshold voltage and quick switching. When n-type dopants are utilised in the gate area, the transistor is known as an n-channel metal-oxide semiconductor (nMOS) (the “channel”). The device turns on when the gate receives a positive voltage.
By forming an inversion layer in a p-type transistor body, these nMOS transistors function. The n-channel inversion layer is capable of transporting electrons between n-type “source” and “drain” terminals. By applying voltage to the third terminal, referred to as the gate, the n-channel is established.
The Global NMOS transistor market accounted for $XX Billion in 2023 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2024 to 2030.
Octopart manufactures the 2N7000/ 2N7002/ NDS7002A N-Channel Enhancement Mode Field Effect Transistor. The high cell density, DMOS technology developed exclusively by ON Semiconductor is used to create these N-channel enhancement mode field effect transistors. While still offering robust, dependable, and quick switching performance, these components have been created to minimise on-state resistance.
Stresses above the device’s absolute maximum ratings could harm it. It may not be possible for the device to operate or function above the recommended operating conditions, and it is not advisable to put the parts under excessive stress. Furthermore, prolonged exposure to stressors exceeding the advised operating limits may reduce the reliability of a device. Only stress ratings have an absolute maximum. All values, unless otherwise specified, are at T = 25°C.
