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A NOR-Based multichip package type memory system is disclosed. It consists of a variety of memory integrated circuit types that are housed in a package with an internal bus and accessible from the outside and/or inside the package, as well as a controlling integrated circuit that is housed in the package and controls an internal bus when it receives instructions for data transfer from the outside of the package.
The installation of memory integrated circuits (storer LSI) that are connected to computer systems and I/O often occurs under the direction of the system’s central processor unit.
However, if the CPU handles data transmission and reception via system bus as part of the overall management of system bus, the strain placed on the CPU will grow.
By convention, employ DMA pattern to efficiently execute storer LSI, possibly communicate data between storer LSI and the input/output device, and lessen CPU burden.
Being positioned at from polytype memory integrated circuit is read out up to the data of the memory cell of the continuation address of the termination address of this first instruction, and being at the control integrated circuit in the accumulator system that is encapsulated in the encapsulation when instruction that data in package outside is received accumulator system transmit.
The Global NOR-Based Multi-Chip Package market accounted for $XX Billion in 2022 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2023 to 2030.
The first multi-chip package featuring PRAM in the industry was launched by Samsung Electronics and will be used in smartphones starting later this quarter.
The 512 MB Samsung PRAM in the MCP is backwards compatible with NOR flash memory in the 40 nanometer class in terms of both hardware and software capability, giving mobile phone manufacturers the convenience of multi-chip packaging that is completely compatible with previous stand-alone PRAM chip technology.
As NOR flash’s replacement in consumer electronics designs, PRAM is anticipated to be widely adopted and develop into a significant memory technology.
PRAM offers three times the data storage performance per word of NOR chips because it stores data using the phase-change properties of its base material, an alloy of germanium, antimony, and titanium.The nonvolatile properties of flash memory and the high-speed capabilities of DRAM are combined in this new PRAM-packaged memory.