Key Findings
- Planar Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are high-performance power switching devices offering superior efficiency, thermal stability, and high-voltage capabilities over traditional silicon MOSFETs.
- The planar structure in SiC MOSFETs provides a simpler and more mature manufacturing process compared to newer trench designs, making it ideal for cost-sensitive applications in industrial power conversion and electric vehicles (EVs).
- Planar SiC MOSFETs exhibit excellent switching performance, reduced conduction losses, and higher breakdown voltages, enabling compact and reliable power modules for inverters, onboard chargers, and renewable energy systems.
- With growing emphasis on high-efficiency power electronics for EVs, solar inverters, and grid infrastructure, planar SiC MOSFETs are increasingly deployed due to their ability to operate at higher temperatures and frequencies.
- Key manufacturers such as Wolfspeed, STMicroelectronics, ROHM Semiconductor, and Infineon Technologies are advancing planar SiC MOSFET designs with enhanced ruggedness and cost competitiveness.
- While trench SiC MOSFETs offer slightly better performance in some applications, planar variants are still widely used due to their proven reliability and ease of integration in existing systems.
- The market is benefitting from rising regulatory pressure to reduce CO₂ emissions through adoption of efficient power devices in transportation and industrial equipment.
- Asia-Pacific is the leading production and consumption region, driven by massive EV manufacturing bases in China and Japan and government-backed investments in power semiconductors.
- Challenges remain in improving channel mobility, oxide reliability, and reducing the cost gap with silicon IGBTs, but rapid material and process innovation is underway.
- The global planar SiC MOSFET market is positioned for strong growth through 2030, supported by increasing electrification of transport and industrial automation.
Market Overview
Planar SiC MOSFETs utilize a planar gate structure built on wide bandgap silicon carbide substrates, allowing operation at higher voltages, temperatures, and switching speeds compared to silicon MOSFETs. The wide bandgap of SiC (3.26 eV) results in lower leakage currents and better thermal conductivity, making planar SiC MOSFETs highly suitable for demanding power electronics applications.
While trench SiC MOSFETs are newer and provide lower on-resistance in some cases, the planar approach remains highly competitive due to its simpler manufacturing and robust oxide reliability. Planar SiC MOSFETs are particularly valuable in applications where high blocking voltage and surge capability are needed—such as traction inverters, power factor correction (PFC), and DC-DC converters.
As global demand increases for energy-efficient systems, planar SiC MOSFETs are rapidly replacing conventional silicon-based IGBTs and MOSFETs, particularly in high-voltage applications exceeding 600V. The planar design also offers excellent short-circuit ruggedness and gate oxide robustness, making it preferred for mission-critical systems.
Planar SiC MOSFET Market Size and Forecast
The global planar SiC MOSFET market was valued at USD 720 million in 2024 and is projected to reach USD 2.48 billion by 2030, expanding at a CAGR of 22.9% over the forecast period. This growth is fueled by rising adoption in electric vehicles, renewable energy systems, and industrial power modules that demand compact, high-efficiency switching devices.
Major OEMs and power electronics system integrators are transitioning to planar SiC technology to meet performance and energy efficiency targets, particularly as device costs decline due to improved wafer yields and larger substrate diameters.
Future Outlook
The outlook for planar SiC MOSFETs is positive, as global power systems move toward higher voltages and stricter efficiency regulations. Automotive electrification and decentralized power generation are expected to be the primary growth engines over the next five years.
Future developments will include enhanced planar gate oxide designs to boost channel mobility and lifetime, alongside expanded production of 8-inch SiC wafers to reduce cost per die. As more manufacturers qualify planar SiC devices for automotive-grade applications, mainstream deployment in EV drivetrains and charging infrastructure is anticipated.
Additionally, hybrid modules that combine planar SiC MOSFETs with silicon diodes or trench SiC components will enable optimized system design for specific load profiles and cooling constraints.
Planar SiC MOSFET Market Trends
- Shift Toward Electrified Transportation Infrastructure: Electrification of transport, particularly electric passenger cars, commercial vehicles, and railway traction, is driving demand for high-performance planar SiC MOSFETs. These devices offer the voltage headroom, thermal resilience, and switching efficiency needed to enable compact and lightweight powertrains. Automotive OEMs are adopting planar SiC solutions for inverters, onboard chargers, and DC-DC converters to achieve higher range and energy efficiency.
- Transition to 8-inch SiC Wafer Production: Key players are scaling up production of 200mm (8-inch) SiC wafers to improve manufacturing yield and reduce device costs. Planar SiC MOSFETs benefit from this transition due to more mature process recipes and higher throughput per wafer. The 8-inch shift also facilitates integration with standard CMOS-compatible tools, improving fab efficiency and cost structure across the supply chain.
- Increased Adoption in Renewable Energy Inverters: Planar SiC MOSFETs are gaining significant traction in solar PV inverters, wind turbine converters, and energy storage systems. Their low switching losses and high thermal stability allow for more compact and reliable inverter designs, especially in high-voltage string and central inverter architectures. This trend is supported by government incentives for green energy and carbon neutrality goals.
- Integration into Multi-Level and Modular Power Systems: To support high-voltage applications exceeding 1,200V, planar SiC MOSFETs are being integrated into cascaded H-bridge, modular multilevel converter (MMC), and T-type inverter topologies. These architectures leverage the robustness of planar devices to manage voltage balancing, improve fault tolerance, and reduce total harmonic distortion (THD), making them ideal for industrial drives, HVDC transmission, and rail power supplies.
Market Growth Drivers
- Growing Adoption of SiC in Electric Vehicles: Automotive applications are a major driver of the planar SiC MOSFET market, with automakers adopting SiC for traction inverters and high-voltage battery systems. Planar SiC MOSFETs offer fast switching, lower conduction losses, and compact package designs that enable improved drivetrain efficiency and thermal management.
- Demand for High-Temperature and High-Frequency Devices: Industrial and aerospace systems increasingly require power devices that operate reliably at elevated temperatures (>175°C) and high switching frequencies. Planar SiC MOSFETs are well-suited to these environments, reducing the need for bulky cooling systems and enabling lightweight, high-density power modules.
- Government Policies Supporting Wide Bandgap Adoption: Regulatory mandates around energy efficiency, EV subsidies, and carbon emissions are accelerating the shift from silicon to wide bandgap semiconductors. Initiatives in the US, EU, and China are encouraging adoption of SiC MOSFETs across automotive, energy, and industrial sectors, fueling market growth.
- Maturing Ecosystem for SiC Power Modules: The growing availability of supporting components such as SiC diodes, gate drivers, substrates, and packaging solutions is easing integration of planar SiC MOSFETs into commercial systems. This ecosystem maturity shortens development cycles and improves system reliability, further boosting adoption.
Challenges in the Market
- Higher Cost Compared to Silicon Devices: Despite efficiency gains, planar SiC MOSFETs remain more expensive than traditional silicon IGBTs and MOSFETs. The higher upfront cost can limit adoption in price-sensitive applications, although total cost of ownership (TCO) benefits are increasingly recognized.
- Gate Oxide Reliability Concerns: The planar structure, while simpler to manufacture, poses challenges in ensuring long-term gate oxide stability and reliability under high-field operation. Defects at the SiC/SiO₂ interface can lead to threshold voltage shifts and reduced device lifetime, requiring continued research into oxide processing and passivation techniques.
- Packaging and Thermal Management Constraints: To fully exploit the performance of planar SiC MOSFETs, advanced packaging with low parasitics and efficient thermal paths is necessary. Current packaging technologies may limit switching speed or thermal dissipation, especially in compact systems, adding design complexity.
- Competition from Trench SiC and GaN Technologies:While planar SiC is reliable and proven, trench SiC MOSFETs offer lower R_DS(on) and improved energy efficiency in certain conditions. Additionally, GaN-on-Si devices are gaining ground in low-voltage applications (600–900V), which could restrict planar SiC’s growth in segments like consumer power supplies and telecom rectifiers.
Planar SiC MOSFET Market Segmentation
By Voltage Rating
- 650V
- 1,200V
- 1,700V
- 3,300V and Above
By Packaging Type
- Discrete Packages (TO-247, TO-220, etc.)
- Power Modules
- Bare Die / Chip-on-Board
By End-Use Application
- Electric Vehicles (EVs)
- Industrial Motor Drives
- Solar and Wind Inverters
- Railway Traction
- Aerospace & Defense
- Data Centers & UPS
By Region
- North America
- Europe
- Asia-Pacific
- Rest of the World (ROW)
Leading Players
- Wolfspeed Inc.
- STMicroelectronics
- ROHM Semiconductor
- Infineon Technologies AG
- ON Semiconductor
- Mitsubishi Electric Corporation
- Littelfuse Inc.
- GeneSiC Semiconductor
- Microchip Technology Inc.
- Fuji Electric Co., Ltd.
Recent Developments
- In 2024, Wolfspeed ramped up 200mm SiC wafer production at its Mohawk Valley Fab, boosting supply of planar MOSFETs for automotive and industrial clients.
- STMicroelectronics released a new series of AEC-Q101 qualified planar SiC MOSFETs targeting 1,200V EV inverter applications.
- ROHM Semiconductor announced improved planar MOSFET designs with enhanced gate oxide reliability and 30% lower on-resistance.
- Infineon began volume production of planar SiC MOSFET modules for European railway systems and heavy-duty EVs.
- Mitsubishi Electric developed hybrid modules combining planar SiC MOSFETs with Si IGBT control logic for retrofitting industrial drives.
