GLOBAL RADIATION HARDENED FULL BRIDGE N-CHANNEL FET DRIVER MARKET

INTRODUCTION

The is a monolithic Full Bridge N-Channel FET Driver IC with a high frequency and medium voltage. A TTL-level input comparator built into the device can be used to enable the "hysteresis" and PWM modes of operation.

The lower two external power MOSFETs can be forced to freewheel current by its HEN (high enable) lead, keeping the higher power MOSFETs off.

Due to its ability to switch at high frequencies, it can be used to drive high performance stepper motors, and these devices can also drive medium voltage motors due to the low minimum "on-time" that can enable precision micro-stepping. Control loop crossover frequencies and dead-times are maximised by short propagation delays, 

GLOBAL RADIATION HARDENED FULL BRIDGE N-CHANNEL FET DRIVER MARKET SIZE AND FORECAST

The Global Radiation Hardened Full Bridge N-Channel FET Driver market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2022 to 2030.

NEW PRODUCT LAUNCH

Full Bridge N-Channel FET Driver With Radiation hardening  from Intersil Corporation  is a monolithic Full Bridge N-Channel FET Driver IC with a high frequency and medium voltage.

A TTL-level input comparator built into the device can be used to enable the "hysteresis" and PWM modes of operation. The lower two external power MOSFETs can be forced to freewheel current by its HEN (high enable) lead, keeping the higher power MOSFETs off.

Due to its ability to switch at high frequencies, the HS-4080ARH is well suited for use in distributed DC power supplies and to DC converters.

Two HS-4080ARHs can be used to drive high performance stepper motors, and these devices can also drive medium voltage motors due to the low minimum "on-time" that can enable precision micro-stepping.

SMD # 5962-99617 Electrically Screened, QML Qualified, per MIL-PRF-38535 Requirements Gamma Dose Radiation Environment.

300kRAD(Si) (Max) (Max) - Latches Driven by Immune RSG DI Process, N-Channel FET Complete Bridge, High Side Chop Capability Bootstrap Materials 95VDC TTL Comparator Input Levels Maximum Voltage Drives 1000pF Load with User-Programmable Rise and Fall Times of 50ns Bootstrap and Dead Time Charge-Pump Maintain Upper Bias Supplies DIS (Disable) Low Power Consumption Undervoltage Protection Pin Pulls Gates Single Supply Operates at 18V

COMPANY PROFILE

• Microchip Technology Inc. 
• BAE Systems 
• Renesas Electronics Corporation 
• Infineon Technologies AG
• STMicroelectronics 
• Xilinx, Inc. 

THIS REPORT WILL ANSWER FOLLOWING QUESTIONS

1. What is the average cost perGlobal Radiation Hardened Full Bridge N-Channel FET Driver marketright now and how will it change in the next 5-6 years?
2. Average cost to set up aGlobal Radiation Hardened Full Bridge N-Channel FET Driver marketin the US, Europe and China?
3. How manyGlobal Radiation Hardened Full Bridge N-Channel FET Driver marketare manufactured per annum globally? Who are the sub-component suppliers in different regions?
4. What is happening in the overall public, globally?
5. Cost breakup of aGlobal Radiation Hardened Full Bridge N-Channel FET Driver marketand key vendor selection criteria
6. Where is theGlobal Radiation Hardened Full Bridge N-Channel FET Driver market manufactured? What is the average margin per equipment?
7. Market share ofGlobal Radiation Hardened Full Bridge N-Channel FET Driver marketmanufacturers and their upcoming products
8. The most important plannedGlobal Radiation Hardened Full Bridge N-Channel FET Driver marketin next 2 years
9. Details on network of majorGlobal Radiation Hardened Full Bridge N-Channel FET Driver marketand pricing plans
10. Cost advantage for OEMs who manufactureGlobal Radiation Hardened Full Bridge N-Channel FET Driver marketin-house
11. 5 key predictions for next 5 years inGlobal Radiation Hardened Full Bridge N-Channel FET Driver market
12. Average B-2-BGlobal Radiation Hardened Full Bridge N-Channel FET Driver marketprice in all segments
13. Latest trends inGlobal Radiation Hardened Full Bridge N-Channel FET Driver market, by every market segment
14. The market size (both volume and value) ofGlobal Radiation Hardened Full Bridge N-Channel FET Driver marketin 2022-2030 and every year in between?
15. Global production breakup ofGlobal Radiation Hardened Full Bridge N-Channel FET Driver market, by suppliers and their OEM relationship