GLOBAL SiC SBD MARKET

INTRODUCTION

SiC means Schotty barrier diodes and SBD means  Si schottky barrier diodes . Fast functioning is a key feature, and the structure is virtually identical to that of a Si Schottky barrier diode. SiC SBDs have a high voltage and good high-speed functioning as its main characteristics.

PN-junction diodes are Si diodes with breakdown voltages comparable to or greater than that of SBDs . In an SBD, only moving electrons are responsible for current flow, whereas in a PN-junction diode, both moving electrons and moving holes are responsible. The minority carrier, or holes, build up in the n layer, which causes the resistance value to decrease. This results in the simultaneous achievement of a high withstand voltage and low resistance, but the turn-off time is slow.

GLOBAL SiC SBD MARKET SIZE AND FORECAST

The global SiC SBD market accounted for $XX Billion in 2021 and is anticipated to reach $XX Billion by 2030, registering a CAGR of XX% from 2022 to 2030.

NEW PRODUCT LAUNCH

Announcing the release of its 2nd-generation discrete SiC-SBD  Series of power semiconductors, Fuji Electric Co., Ltd.  is happy to help data centers and communication base stations save energy.

Making a thinner substrate element is one method of reducing power loss in power semiconductors by shortening the distance that the energy travels. This series makes use of a SiC (silicon carbide) substrate that is around one-third thinner than FE’s customary 1st-generation SiC-SBD Series and a redesigned chip structure that successfully lowers steady-state loss. FE has used its unique processing method to produce one of the thinnest substrates in the industry. Additionally, it has increased resilience to strong currents.

The silicon-carbide Schottky-barrier diode (SiC-SBD), which minimizes the power loss and physical size of power supply systems for infrastructure, photovoltaic power systems, and more, was introduced by Mitsubishi Electric Corporation.

Due to the junction-barrier Schottky (JBS) structure, this product’s silicon carbide helps to reduce power loss and package space. It also expands the product line’s suitability for a variety of applications. 

COMPANY PROFILE

• Infineon
• Wolfspeed
• Onsemi
• Rohm
• Fuji

THIS REPORT WILL ANSWER FOLLOWING QUESTIONS

1. What is the average cost per global SiC SBD market right now and how will it change in the next 5-6 years?
2. Average cost to set up a global SiC SBD market in the US, Europe and China?
3. How many global SiC SBD markets are manufactured per annum globally? Who are the sub-component suppliers in different regions?
4. What is happening in the overall public, globally?
5. Cost breakup of a global SiC SBD market and key vendor selection criteria
6. Where is the global SiC SBD market  manufactured? What is the average margin per equipment?
7. Market share of global SiC SBD market manufacturers and their upcoming products
8. The most important planned global SiC SBD market in next 2 years
9. Details on network of major global SiC SBD market and pricing plans
10. Cost advantage for OEMs who manufacture global SiC SBD market in-house
11. 5 key predictions for next 5 years in global SiC SBD market
12. Average B-2-Bglobal SiC SBD market price in all segments
13. Latest trends in global SiC SBD market, by every market segment
14. The market size (both volume and value) of the global SiC SBD market in 2022-2030 and every year in between?
15. Global production breakup of global SiC SBD market, by suppliers and their OEM relationship